AOB125A60L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB125A60L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 357 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 34 nS
Cossⓘ - Capacitancia de salida: 85 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de AOB125A60L MOSFET
- Selecciónⓘ de transistores por parámetros
AOB125A60L datasheet
..1. Size:486K aosemi
aob125a60l.pdf 
AOT125A60L/AOTF125A60L/AOB125A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
..2. Size:486K aosemi
aot125a60l aotf125a60l aob125a60l.pdf
AOT125A60L/AOTF125A60L/AOB125A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max
9.1. Size:385K aosemi
aob12n65l.pdf
AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
9.2. Size:257K aosemi
aob12n50l.pdf
AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
9.3. Size:435K aosemi
aot12n65 aotf12n65 aotf12n65l aob12n65l.pdf
AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB12N65L have been fabricated using an advanced ID (at VGS=10V) 12A high voltage MOSFET process that is designed to deliver RDS(ON) (at VGS=10V)
9.4. Size:385K aosemi
aot12n65 aotf12n65 aob12n65.pdf
AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
9.5. Size:435K aosemi
aot12n50 aob12n50 aotf12n50.pdf
AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
9.6. Size:590K aosemi
aob12n60fd.pdf
AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
9.7. Size:434K aosemi
aob12n50.pdf
AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)
9.8. Size:495K aosemi
aob12t60p aotf12t60p.pdf
AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
9.9. Size:498K aosemi
aob12t60p.pdf
AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max
9.10. Size:253K inchange semiconductor
aob12n65l.pdf
isc N-Channel MOSFET Transistor AOB12N65L FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
9.11. Size:253K inchange semiconductor
aob12n65.pdf
isc N-Channel MOSFET Transistor AOB12N65 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
9.12. Size:253K inchange semiconductor
aob12n60fd.pdf
isc N-Channel MOSFET Transistor AOB12N60FD FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.13. Size:253K inchange semiconductor
aob12n50.pdf
isc N-Channel MOSFET Transistor AOB12N50 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
Otros transistores... AOWF360A70, AOWF380A60C, AOWF450A70, AOWF600A60, AOWF600A70, AOWF600A70F, AOWF780A70, AOB095A60L, IRF3205, AOB160A60L, AOB190A60CL, AOB190A60L, AOB280A60L, AOB360A70L, AOB380A60CL, AOB450A70L, AOB600A60L
