FQPF630 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF630
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua
de drenaje: 6.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de FQPF630 MOSFET
- Selecciónⓘ de transistores por parámetros
FQPF630 datasheet
..1. Size:765K fairchild semi
fqpf630.pdf 
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.3A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been es
9.1. Size:858K fairchild semi
fqpf6n90ct.pdf
TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to
9.2. Size:733K fairchild semi
fqpf6n15.pdf
May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 5.0A, 150V, RDS(on) = 0.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.5 nC) planar stripe, DMOS technology. Low Crss ( typical 9.6 pF) This advanced technology has been e
9.4. Size:1088K fairchild semi
fqp6n40cf fqpf6n40cf.pdf
February 2006 TM FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description 6A, 400V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 16nC) stripe, DMOS technology. This advanced technology has been especially tailored to Low Crss ( typi
9.5. Size:860K fairchild semi
fqp6n90c fqpf6n90c.pdf
TM QFET FQP6N90C/FQPF6N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6A, 900V, RDS(on) = 2.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to
9.6. Size:542K fairchild semi
fqpf6n60.pdf
April 2000 TM QFET QFET QFET QFET FQPF6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.6A, 600V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been es
9.7. Size:664K fairchild semi
fqpf6n80.pdf
September 2000 TM QFET FQPF6N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tail
9.8. Size:758K fairchild semi
fqpf6n50.pdf
April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.6A, 500V, RDS(on) = 1.3 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 17 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been
9.9. Size:931K fairchild semi
fqp6n60c fqp6n60c fqpf6n60c fqpf6n60c.pdf
QFET FQP6N60C/FQPF6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 7 pF) This advanced technology has been especially tailored to
9.10. Size:558K fairchild semi
fqpf6n70.pdf
December 2000 TM QFET QFET QFET QFET FQPF6N70 700V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.5A, 700V, RDS(on) = 1.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology is esp
9.11. Size:600K fairchild semi
fqpf6n90.pdf
QFET N-CHANNEL FQPF6N90 FEATURES BVDSS = 900V Advanced New Design RDS(ON) = 1.9 Avalanche Rugged Technology ID = 3.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics TO-220F Unrivalled Gate Charge 40nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 1.5 (Typ.) 1 2 3 1. Gate 2. Drain 3. Sou
9.12. Size:723K fairchild semi
fqpf6n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.0A, 250V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been e
9.13. Size:681K fairchild semi
fqpf65n06.pdf
May 2001 TM QFET FQPF65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 40A, 60V, RDS(on) = 0.016 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored
9.14. Size:532K fairchild semi
fqpf6p25.pdf
April 2000 TM QFET QFET QFET QFET FQPF6P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.2A, -250V, RDS(on) = 1.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been
9.15. Size:1001K fairchild semi
fqpf6n80t.pdf
TM QFET FQPF6N80T 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 800V, RDS(on) = 1.95 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to
9.16. Size:889K fairchild semi
fqp6n80c fqpf6n80c.pdf
TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to
9.18. Size:1046K onsemi
fqp6n60c fqpf6n60c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.19. Size:1255K onsemi
fqp6n90c fqpf6n90c.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.20. Size:587K onsemi
fqpf65n06.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.21. Size:549K onsemi
fqpf6n80t.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.22. Size:890K onsemi
fqp6n80c fqpf6n80c.pdf
TM QFET FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 800V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 8 pF) This advanced technology has been especially tailored to
9.23. Size:921K cn vbsemi
fqpf6n60c.pdf
FQPF6N60C www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.1 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS
Otros transistores... FDMS8680
, FQPF45N15V2
, FQPF47P06
, FQPF4N90C
, FQPF5N40
, FDD26AN06F085
, FQPF5N90
, FQPF5P20
, TK10A60D
, FDMC8296
, FQPF65N06
, FQPF6N80C
, FDMS8880
, FQPF6N80T
, FDH50N50
, FQPF6N90C
, FQPF70N10
.
History: FQPF33N10
