FXN0404C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN0404C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 138 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 102 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO220

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FXN0404C datasheet

 ..1. Size:289K  cn fx-semi
 fxn0404c.pdf pdf_icon

FXN0404C

FuXin Semiconductor Co., Ltd. FXN0404C Series Rev.A General Description Features The FXN0404C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.1. Size:274K  cn fx-semi
 fxn0406c.pdf pdf_icon

FXN0404C

FuXin Semiconductor Co., Ltd. FXN0406C Series Rev.A Features General Description VDS = 60V ID = 180A @VGS = 10V The FXN0406C uses advanced Silicon s MOSFET Technology, which Very low on-resistance provides high performance in on-state resistance, fast switching RDS(ON)

 8.2. Size:918K  cn fx-semi
 fxn0405c.pdf pdf_icon

FXN0404C

FuXin Semiconductor Co., Ltd. FXN0405C Series Rev.A General Description Features The FXN0405C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 206A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.3. Size:406K  cn fx-semi
 fxn0406h.pdf pdf_icon

FXN0404C

FuXin Semiconductor Co., Ltd. FXN0406H Rev.A General Description Features The FXN0406H uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 180A @VGS = 10V performance, and excellent quality. Very low on-resistance RDS(ON)

MOSTRAR MÁS

Otros transistores... FXN06S085C, FXN0703D, FXN0704C, FXN0406H, FXN0503D, FXN0504D, FXN0507C, FXN0305C, 18N50, FXN0405C, FXN0406C, FXN0205C, FXN0206C, FXN0303D, FXN0304C, FXN9N45F, FXN9N50F