FXN0303D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FXN0303D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 108 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 950 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de FXN0303D MOSFET
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FXN0303D datasheet
fxn0303d.pdf
FuXin Semiconductor Co., Ltd. FXN0303D Series Rev.A General Description Features The FXN0303D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0304c.pdf
FuXin Semiconductor Co., Ltd. FXN0304C Series Rev.A General Description Features The FXN0304C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applica
fxn0305c.pdf
FuXin Semiconductor Co., Ltd. FXN0305C Series Rev.A General Description Features The FXN0305C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 240A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
Otros transistores... FXN0504D, FXN0507C, FXN0305C, FXN0404C, FXN0405C, FXN0406C, FXN0205C, FXN0206C, IRFZ24N, FXN0304C, FXN9N45F, FXN9N50F, FXN9N90F, FXN9N90P, FXN15S50F, FXN18N20C, FXN18N50F
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