FXN4607F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN4607F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: TO220F

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FXN4607F datasheet

 ..1. Size:1233K  cn fx-semi
 fxn4607f.pdf pdf_icon

FXN4607F

FuXin Semiconductor Co., Ltd. FXN4607F Series Rev.A General Description Features The FXN4607F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 7A @V =10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 8.1. Size:600K  cn fx-semi
 fxn4609f.pdf pdf_icon

FXN4607F

FuXin Semiconductor Co., Ltd. FXN4609F Series Rev.A General Description Features The FXN4609F uses advanced Silicon s MOSFET Technology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 9A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appl

 9.1. Size:1122K  cn fx-semi
 fxn4615f.pdf pdf_icon

FXN4607F

FuXin Semiconductor Co., Ltd. FXN4615F Series Rev.A General Description Features The FXN4615F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

 9.2. Size:1500K  cn fx-semi
 fxn4613f.pdf pdf_icon

FXN4607F

FuXin Semiconductor Co., Ltd. FXN4613F Series Rev.A General Description Features The FXN4613F uses advanced Silicon s MOSFET T echnology, which V = 460V DS provides high performance in on-state resistance, fast switching ID = 13A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in i

MOSTRAR MÁS

Otros transistores... FXN5N65D, FXN5N65F, FXN5N65FM, FXN65S55T, FXN07N10NS, FXN0808C, FXN08S65D, FXN09150C, IRF540N, FXN4609F, FXN4611F, FXN4628F, FXN11N45F, FXN12N60FS, FXN12N65F, FXN12S65F, FXN32N55T