FXN12N65F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN12N65F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.6 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 148 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO220F

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FXN12N65F datasheet

 ..1. Size:868K  cn fx-semi
 fxn12n65f.pdf pdf_icon

FXN12N65F

FuXin Semiconductor Co., Ltd. FXN12N65F Series Rev.A General Description Features The FXN12N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind

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 fxn12n60fs.pdf pdf_icon

FXN12N65F

FuXin Semiconductor Co., Ltd. FXN12N60FS Series Rev.A General Description Features The FXN12N60FS uses advanced Silicon s MOSFET Technology, which V = 600V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in i

 9.1. Size:870K  cn fx-semi
 fxn12s65f.pdf pdf_icon

FXN12N65F

FuXin Semiconductor Co., Ltd. FXN12S65F Series Rev.A General Description Features The FXN12S65F uses advanced Cool MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 12A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap

Otros transistores... FXN08S65D, FXN09150C, FXN4607F, FXN4609F, FXN4611F, FXN4628F, FXN11N45F, FXN12N60FS, IRFB4110, FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C, FXN13N45F, FXN13N50C, FXN13N50K