FXN13N50K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FXN13N50K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 228 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO262

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FXN13N50K datasheet

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FXN13N50K

FuXin Semiconductor Co., Ltd. FXN13N50K Series Rev.A General Description Features The FXN13N50K uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 15A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a

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FXN13N50K

FuXin Semiconductor Co., Ltd. FXN13N50C Series Rev.A General Description Features The FXN13N50C uses advanced Silicon s MOSFET Technology, which VDS = 500V provides high performance in on-state resistance, fast switching ID = 13A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

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FXN13N50K

FuXin Semiconductor Co., Ltd. FXN13N45F Series Rev.A General Description Features The FXN13N45F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 13A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in

Otros transistores... FXN12N65F, FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C, FXN13N45F, FXN13N50C, IRFB4115, FXN15N06D, FXN30S55C, FXN30S55F, FXN30S60F, FXN30S60T, FXN20S60F, FXN23S65F, FXN25N50F