110N04 Todos los transistores

110N04/F110N04/I110N04/ E110N04/B110N04/D110N04 160A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 40V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 3.5m DS(on) TYP) RoHS standard. I = 160A D 2 Features Fast Switching Low ON Resistance(Rdson

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet NP110N04PUK R07DS0570EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 17, 2011 Description The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A) Low Ciss Ciss = 10500 pF TYP. (VDS = 25 V) Designed for a

SUM110N04-05H Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ.) 175 C Junction Temperature RoHS 0.0053 at VGS = 10 V 40 95 110 COMPLIANT High Threshold Voltage at High Temperature D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information SUM110N04-05H-E

New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0021 at VGS = 10 V 110 COMPLIANT 40 240 nC 0.0024 at VGS = 4.5 V 110 APPLICATIONS Synchronous Rectification Power Supplies D TO-263 G G D S Top View S

SQM110N04-03 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0028 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 qualifiedd Configuration Single 100 % Rg and UIS Tested Compl

SUM110N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 40 0.0035 at VGS = 10 V 110a RoHS* COMPLIANT TO-263 D G G D S Top View S Ordering Information SUM110N04-04 SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RA

SUM110N04-02L Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available New Package with Low Thermal Resistance 0.0023 at VGS = 10 V RoHS* 40 110a 0.0038 at VGS = 4.5 V COMPLIANT D TO-263 G G D S Top View S Ordering Information SUM110N04-02L SUM110N04-02L-E3 (Lead (Pb)-fr

SQM110N04-04 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0035 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single 100 % Rg and UIS Tested D Co

SQM110N04-03L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0053 Package with Low Thermal Resistance ID (A) 120 AEC-Q101 Qualifiedd Configuration Single

SUM110N04-03P Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.0031 at VGS = 10 V 40 110a RoHS* Package with Low Thermal Resistance COMPLIANT Extremely Low Qgd WFETTM Technology for Low Switching Losses 100 % Rg Tested D TO

SUM110N04-2m3L Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) 100 % Rg Tested RoHS 0.0023 at VGS = 10 V COMPLIANT 40 110a 0.003 at VGS = 4.5 V D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information SUM110N04-2m3L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T

SUM110N04-03 Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available Package with Low Thermal Resistance 0.0028 at VGS = 10 V 40 110a RoHS* COMPLIANT D TO-263 G G D S Top View S Ordering Information SUM110N04-03 SUM110N04-03-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MA

SQM110N04-02L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) 40 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 10 V 0.0023 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 4.5 V 0.0041 AEC-Q101 Qualifiedd ID (A) 120 100 % Rg and UIS T

SQM110N04-04 Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 40 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET ID (A) 120 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D Compliant to RoHS Directive 2002/95/EC TO-263

AP110N04D 40V N-Channel Enhancement Mode MOSFET Description The AP110N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =110A DS D R