D50N06 Todos los transistores

50N06/F50N06/I50N06/ E50N06/B50N06/D50N06 60A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10.5m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low ga

IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark

Philips Semiconductors Product specification TrenchMOS transistor PHP50N06LT, PHB50N06LT, PHD50N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 50 A Stable off-state characteristics High thermal cycling performance RDS(ON) 24 m (VGS = 5 V) g Low thermal

New Product SUD50N06-07L Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( ) ID (A)c 175 C Junction Temperature 0.0074 at VGS = 10 V RoHS 96 60 COMPLIANT 0.0088 at VGS = 4.5 V 88 D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information SUD50N06-07L-E3 (Lead (Pb)-

New Product SUD50N06-08H Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)c Qg (Typ) 175 C Junction Temperature 0.0078 at VGS = 10 V RoHS 60 93 94 100 % Rg Tested COMPLIANT High Threshold at High Temperature TO-252 D G Drain Connected to Tab G D S Top View S Ordering In

SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.0093 at VGS = 10 V 50 RoHS* 60 0.0122 at VGS = 4.5 V 50 COMPLIANT TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD50N06-09L SUD50N06

SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.0093 at VGS = 10 V 50 Material categorization 60 0.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912 TO-252 D G Drain Connected

SQD50N06-07L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0076 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.009 Package with Low Thermal Resistance ID (A) 50 100 % Rg and UIS Tested Configuration Single

SQD50N06-09L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.009 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.013 100 % Rg and UIS Tested ID (A) 50 Compliant to RoHS Directive 2002/95/EC Configuration Singl

SPD50N06S2-14 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 14.4 m Enhancement mode ID 50 A 175 C operating temperature P- TO252 -3-11 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPD50N06S2-14 P- TO252 -3-11 Q67060-S7418 PN0614 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbo

IPD50N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 7.8 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-08 PG-TO252-3-11 4N06L08 Maximum ra

IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 12.7 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Mark

IPD50N06S2-14 Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 14.4 m DS(on),max Automotive AEC Q101 qualified I 50 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD50N06S2-14

IPD50N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 9.0 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4-09 PG-TO252-3-11 4N0609 Maximum ratings, a

IPD50N06S4L-12 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 12 m DS(on),max I 50 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Maximum rat

SSD50N06-15D N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power m

BRD50N06 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

SVD50N06T/D/M/MJ 50A 60V N 2 SVD50N06T/D/M/MJ N MOS VDMOS 1 1 3 TO-252-2L 3

N N-CHANNEL MOSFET FHP50N06/FHU50N06D/FHD50N06D MAIN CHARACTERISTICS FEATURES ID 50 A Low gate charge VDSS 60 V Crss ( 130pF) Low Crss (typical 130pF ) Rdson-typ @Vgs=10V 8.5m Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt

Sep 2015 BVDSS = 60 V RDS(on) typ HRD50N06K / HRU50N06K ID = 40 A 60V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD50N06K HRU50N06K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 11.

AD50N06S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 60V 20m @10V 50A Feature Application High density cell design for ultra low Rdson Power switching application Fully characterized avalanche voltage and current Hard switched and high frequency circuits Good stability and uniformity with high EAS Uninterruptible power supply Excellent p

Nov 2019 BVDSS = 60 V RDS(on) = 15 m HD50N06D / HU50N06D ID = 50 A 60V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD50N06D HU50N06D Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.)

PTD50N06 60V/50A N-Channel Advanced Power MOSFET Features General Features Low On-Resistance VDS =60V,ID =50A Fast Switching RDS(ON)

CMD50N06B www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

FQD50N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit U

IPD50N06S2-14 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Li

SUD50N06-09L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

SQD50N06-09L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim

Isc N-Channel MOSFET Transistor PHD50N06LT FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

isc N-Channel MOSFET Transistor FQD50N06 FEATURES Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 22m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switch mode power supplies DC-DC converters