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5N65C 5A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 5A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 2.3 2 Features Fast switching ESD improve

SPA15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220-3-31 Type Package Marking SPA15N65C3 PG-TO220-3-31 15N65C3 Maximum ratings, at T =

SPI15N65C3 C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 650 V DS R 'AH 93E7 5 3C97 0.28 W DS(on) max R IEC7?7 6G 6E C3E76 6 nC g typ R #;9 B73= 5FCC7@E 53B34;>;EJ R , F3>;8;76 for industrial grade applications 355AC6;@9 EA % R +4 8C77 >736 B>3E;@9 - A#. 5A?B>;3@E; Halogen free mold compound TO 262 1 ;;8!#& 01>53 10 2;= R ) AE74AA= 63BE7C Type Package Mar

SPP15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220-3-1 CoolMOS C3 designed for Notebook Adapter Type Package Marking SPP15N65C3

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25 C to 175 C 650 V VCGR

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH75N65C3H1 IC110 = 75A GenX3TM w/ Sonic VCE(sat) 2.3V Diode tfi(typ) = 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE =

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYN75N65C3D1 IC110 = 75A GenX3TM w/ Diode VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 650 V G VCGR TJ = 25

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3 GenX3TM IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C Tab

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3D1M GenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V (Electrically Isolated Tab) tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25 C to 175 C 650 V VCGR

Preliminary Technical Information VCES = 650V XPTTM 650V IGBT IXYH75N65C3D1 IC110 = 75A GenX3TM w/ Diode VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 6

VCES = 650V XPTTM 650V IGBT IXYH75N65C3 IC110 = 75A GenX3TM VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V G C Tab VGEM

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANN

N R N-CHANNEL MOSFET JCS15N65EI Package MAIN CHARACTERISTICS ID 15A VDSS 650V Rdson-max 0.52 Vgs=10V Qg-Typ 52.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

F5N65C 5A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 5A D performance and enhance the avalanche energy. Which accords with the RoHS standard.TO-220F provides insulation voltage rated at 2000V RMS R DS(on) TYP) =

JFPC5N65C JFFC5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 4.5A , 650V, RDS(on)typ. = 2.3 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance

SLP5N65C / SLF5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on)typ. = 2.6 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching

WML1 MM15N65C 15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4

WML1 MM15N65C 15N65C2, WMK15N65C2, WM C2 WMN15N65C2, WMP15N65C2, WM C2 MO15N65C 650V n Power MOSFET V 0.32 Super Junction Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C2

RoHS DGW75N65CTL1 COMPLIANT IGBT Discrete V 650 V CE I 75 A C V CE(SAT) 1.65 V I = A C 75 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Pos

DGW15N65CTL RoHS COMPLIANT IGBT Descrete V 650 V CE I 15 A C V I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switchingapplications Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, temp

RoHS DGP15N65CTL COMPLIANT IGBT Descrete V 650 V CE I 15 A C V I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switchingapplications Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, te

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA15N65C3 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET