DH012N03D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH012N03D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 320 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1266 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de DH012N03D MOSFET
- Selecciónⓘ de transistores por parámetros
DH012N03D datasheet
dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf
DH012N03/DH012N03F/DH012N03I/ DH012N03E/DH012N03B/DH012N03D 320A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 1.5m DS(on) (TYP) standard. 1 3 S I = 320A D 2 Features Low on res
dh012n03p.pdf
DH012N03P 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used V = 30V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 1.2m DS(on) (TYP) G standard. I Silicon limit = 256A D 1 3 S I Package limit =100A D 2 Features Low on resist
dh012n03u.pdf
DH012N03U 235A 30V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V =30V DSS Rdson and low gate charge. Which accords with the RoHS G R =1.15m DS(on) (TYP) standard. 1 3 S I =235A D 2 Features Low on resistance Low gate charge Fast switching
Otros transistores... 60N10E , 60N10F , 60N10I , AOB413 , B110N04 , HYG035N10NS2P , HYG035N10NS2B , JMTE070N07A , 7N60 , DH012N03E , DH012N03F , DH012N03I , DH012N03P , DH012N03U , DH019N04F , DH019N04I , DH020N03 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
2sc461 | hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl