DH012N03D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH012N03D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 320 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 209 nC
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1266 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
DH012N03D Datasheet (PDF)
dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf
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DH012N03P100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets usedV = 30VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHS R = 1.2mDS(on) (TYP)Gstandard.I Silicon limit= 256AD13 SI Package limit=100AD2 Features Low on resist
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DH012N03U235A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellentV =30VDSSRdson and low gate charge. Which accords with the RoHSGR =1.15mDS(on) (TYP)standard.13 SI =235AD2 Features Low on resistance Low gate charge Fast switching
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
