DH012N03F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH012N03F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 320 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 209 nC
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1266 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
DH012N03F Datasheet (PDF)
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DH012N03U235A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellentV =30VDSSRdson and low gate charge. Which accords with the RoHSGR =1.15mDS(on) (TYP)standard.13 SI =235AD2 Features Low on resistance Low gate charge Fast switching
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
