B5N50 Todos los transistores

 ..1. Size:642K  cn wxdh
 d5n50 b5n50.pdf

D5N50/B5N50 5A 500V N-channel Enhancement Mode Power MOSFET 1 Description These, the silicon N-channel enhanced VDMOSFETs, is 2 D V = 500V DSS obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 1.35 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 5A 3 S D 2

 0.1. Size:517K  international rectifier
 irfib5n50l.pdf

PD - 94522 SMPS MOSFET IRFIB5N50L HEXFET Power MOSFET Applications VDSS RDS(on) typ. Trr typ. ID l Switch Mode Power Supply (SMPS) 500V 0.67 73ns 4.7A l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness TO-220 Full-Pak l Fully Chara

 0.2. Size:197K  international rectifier
 irfib5n50lpbf.pdf

PD - 95390 IRFIB5N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 0.67 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 0.3. Size:945K  fairchild semi
 fqb5n50ctm fqb5n50c fqi5n50c fqi5n50ctu.pdf

October 2008 QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5A, 500V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tai

 0.4. Size:700K  fairchild semi
 fqb5n50cf fqb5n50cftm.pdf

May 2006 TM FRFET FQB5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS(on) = 1.55 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 18nC) DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially tailored to mini

 0.5. Size:768K  fairchild semi
 fqb5n50tm.pdf

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology

 0.6. Size:806K  vishay
 irfib5n50lpbf.pdf

IRFIB5N50L, SiHFIB5N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications RoHS RDS(on) ( )VGS = 10 V 0.67 COMPLIANT Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 45 Reqirements Qgs (nC) 13 Qgd (nC) 23 Enhanced dV/dt Capabilities Offer Improved Ruggedness