B630 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

B630 datasheet

..1. Size:1604K cn wxdh
630 f630 i630 e630 b630 d630.pdf pdf_icon

630/F630/I630/ E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 200V self-aligned planar technology which reduce the conduction DSS loss, improve switching performance and enhance the R = 0.23 DS(on) (TYP) G avalanche energy. Which accords with the RoHS standard. 1 I = 9A 3 S D 2 Feature

0.1. Size:754K fairchild semi
fqb630tm.pdf pdf_icon

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has b

0.2. Size:369K cet
cep630n ceb630n cef630n.pdf pdf_icon

CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP630N 200V 0.36 9A 10V CEB630N 200V 0.36 9A 10V CEF630N 200V 0.36 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)

0.3. Size:113K tysemi
kqb630.pdf pdf_icon

SMD Type IC SMD Type Transistors Product specification KQB630 TO-263 Unit mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 9A, 200 V. RDS(ON) =0.4 @VGS =10 V Low gate charge (typical 19nC) Low Crss(typical 35pF) Fast switching +0.1 0.1max 1.27-0.1 100% avalanche tested lmproved dv/dt capability 0.81+0.1 -0.1 2.54 1gate 1Gate 2.54+0.2 +0.2 -0.2 +0.1 5.08-0.1 0.4-0.2 2drain 2