B740 Todos los transistores

 

B740 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: B740

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 124 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm

Encapsulados: TO251

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B740 datasheet

 ..1. Size:1411K  cn wxdh
740 f740 i740 e740 b740 d740.pdf pdf_icon

B740

740/F740/I740/ E740/B740/D740 10A 400V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 400V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the R = 0.44 DS(on)(TYP) G avalanche energy. Which accords with the RoHS standard. 1 I = 10A 3 S D 2 Featu

 0.1. Size:44K  renesas
2sb740.pdf pdf_icon

B740

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.2. Size:434K  cet
cep740a ceb740a cef740a.pdf pdf_icon

B740

CEP740A/CEB740A CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP740A 400V 0.55 10A 10V CEB740A 400V 0.55 10A 10V CEF740A 400V 0.55 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D

 0.3. Size:413K  cet
cep740g ceb740g cef740g.pdf pdf_icon

B740

CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP740G 400V 0.55 10A 10V CEB740G 400V 0.55 10A 10V CEF740G 400V 0.55 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES T

Otros transistores... B4N60 , B4N65 , B4N80 , B50N06 , B5N50 , B5N65 , B630 , B640 , 20N60 , B7N70 , B80N06 , DATD063N06N , DATP057N06N , DH009N02 , DH009N02B , DH009N02D , DH009N02E .

 

 

 

 

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