DH012N03 Todos los transistores

 

DH012N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH012N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 270 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 320 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 209 nC
   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 1266 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

DH012N03 Datasheet (PDF)

 ..1. Size:1133K  cn wxdh
 dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf pdf_icon

DH012N03

DH012N03/DH012N03F/DH012N03I/DH012N03E/DH012N03B/DH012N03D320A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 320AD2 Features Low on res

 0.1. Size:790K  cn wxdh
 dh012n03p.pdf pdf_icon

DH012N03

DH012N03P100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets usedV = 30VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHS R = 1.2mDS(on) (TYP)Gstandard.I Silicon limit= 256AD13 SI Package limit=100AD2 Features Low on resist

 0.2. Size:888K  cn wxdh
 dh012n03u.pdf pdf_icon

DH012N03

DH012N03U235A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellentV =30VDSSRdson and low gate charge. Which accords with the RoHSGR =1.15mDS(on) (TYP)standard.13 SI =235AD2 Features Low on resistance Low gate charge Fast switching

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top

 


DH012N03   DH012N03   DH012N03  

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: D9N65 | D8N50 | D80N06 | D7N70 | D7N60 | D740 | D640 | D630 | D5N65-XAD | D25N10 | D18N20 | D12N06 | DH012N03B | DH012N03 | DH009N02P | DH009N02I

 

 

 
Back to Top

 

Popular searches

ksc1815 | bu406 | j201 datasheet | 2n5088 datasheet | irfp064n | tip31 transistor | 2sc1384 | mj21196g

 


 
.