DH012N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH012N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 320 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 1266 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Paquete / Cubierta: TO220
DH012N03 Datasheet (PDF)
dh012n03 dh012n03f dh012n03i dh012n03e dh012n03b dh012n03d.pdf

DH012N03/DH012N03F/DH012N03I/DH012N03E/DH012N03B/DH012N03D320A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 320AD2 Features Low on res
dh012n03p.pdf

DH012N03P100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets usedV = 30VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHS R = 1.2mDS(on) (TYP)Gstandard.I Silicon limit= 256AD13 SI Package limit=100AD2 Features Low on resist
dh012n03u.pdf

DH012N03U235A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellentV =30VDSSRdson and low gate charge. Which accords with the RoHSGR =1.15mDS(on) (TYP)standard.13 SI =235AD2 Features Low on resistance Low gate charge Fast switching
Otros transistores... DATP057N06N , DH009N02 , DH009N02B , DH009N02D , DH009N02E , DH009N02F , DH009N02I , DH009N02P , IRF3710 , DH012N03B , D12N06 , D18N20 , D25N10 , D5N65-XAD , D630 , D640 , D740 .
History: WMJ80R260S
History: WMJ80R260S



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