D12N06 Todos los transistores

 ..1. Size:672K  cn wxdh
 d12n06.pdf

D12N06 12A 60V N-channel Enhancement Mode Power MOSFET 1 Description D12N06 is an N-channel enhancement mode power 2 D V = 60V field-effect transistor. Using advanced trench technology DSS design, providing excellent Rdson and low gate charge.The R = 56m DS(on) (TYP) G product can be used in a wide variety of application.The 1 package form is TO-252. Which accords with the RoHS

 0.1. Size:170K  1
 std12n05l-1 std12n05lt4 std12n06l-1 std12n06lt4.pdf

STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05L 50 V

 0.2. Size:172K  1
 std12n05-1 std12n05t4 std12n06-1 std12n06t4.pdf

STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05 50 V

 0.3. Size:276K  motorola
 mtd12n06e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD12N06EZL/D Designer's Data Sheet MTD12N06EZL TMOS E-FET. High Energy Power FET DPAK for Surface Mount or TMOS POWER FET 12 AMPERES Insertion Mount 60 VOLTS N Channel Enhancement Mode Silicon Gate RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode

 0.4. Size:215K  fairchild semi
 rfd12n06rle rfd12n06rlesm rfp12n06rle.pdf

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN (FLANGE) GATE - rDS(ON) = 0.071 , VGS = 5V (FLANGE) GATE Simulation Models SOURCE - Temperature Compensate

 0.5. Size:863K  onsemi
 rfd12n06rlesm.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.6. Size:835K  cn vbsemi
 rfd12n06rles.pdf

RFD12N06RLES www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 0.7. Size:473K  cn wuxi unigroup
 tsd12n06at.pdf

TSD12N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa