D12N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

D12N0612A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionD12N06 is an N-channel enhancement mode power2 DV = 60Vfield-effect transistor. Using advanced trench technology DSSdesign, providing excellent Rdson and low gate charge.TheR = 56mDS(on) (TYP)Gproduct can be used in a wide variety of application.The1package form is TO-252. Which accords with the RoHS

STD12N05LSTD12N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05L 50 V

STD12N05STD12N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05 50 V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD12N06EZL/DDesigner's Data SheetMTD12N06EZLTMOS E-FET.High Energy Power FETDPAK for Surface Mount orTMOS POWER FET12 AMPERESInsertion Mount60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.180 OHMThis advanced TMOS power FET is designed to withstand highenergy in the avalanche and mode

RFD12N06RLE, RFD12N06RLESM,RFP12N06RLEData Sheet January 200217A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.063, VGS = 10VDRAIN DRAIN (FLANGE)GATE - rDS(ON) = 0.071, VGS = 5V (FLANGE)GATE Simulation ModelsSOURCE- Temperature Compensate

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

RFD12N06RLESwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

TSD12N06AT Wuxi Unigroup Microelectronics Company 60V N-Channel DTMOS FEATURES Trench Power DTMOS technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Pa