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D25N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: D25N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 88 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 107 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: TO252
 

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D25N10 Datasheet (PDF)

 ..1. Size:1238K  cn wxdh
25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf pdf_icon

D25N10

25N10/F25N10/I25N10/E25N10/B25N10/D25N1025A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs UsedV = 100VDSSadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theR = 30mDS(on) TYP)RoHS standard.I = 25AD2 Features Fast Switching Low ON Resistance(Rdson36m)

 0.1. Size:1281K  st
std25n10f7 stf25n10f7 stp25n10f7.pdf pdf_icon

D25N10

STD25N10F7, STF25N10F7, STP25N10F7N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDSS ID PTOTmax.(1)DPAKSTD25N10F7 100 V 0.035 25 A 40 WSTF25N10F7 100 V 0.035 19 A 25 WTABSTP25N10F7 100 V 0.035 25 A 50 W1. @ VGS = 10 V 33

 9.1. Size:147K  vishay
sqd25n15.pdf pdf_icon

D25N10

SQD25N15-52Vishay SiliconixAutomotiveN-Channel 150 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 150DefinitionRDS(on) () at VGS = 10 V 0.052 TrenchFET Power MOSFETID (A) 25 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddDTO-252 Compliant to RoHS Directive 2002/95/EC

 9.2. Size:145K  vishay
sud25n15.pdf pdf_icon

D25N10

SUD25N15-52Vishay SiliconixN-Channel 150-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.052 at VGS = 10 V 25150 PWM Optimized0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-252 Primary Side SwitchDDrain Connec

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History: NTJS3151PT1G | SL50N02D | KI4500BDY | SSW80R160SFD | ET8818 | 2SK2378 | AON6566

 

 
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