D25N10 Todos los transistores

 ..1. Size:1238K  cn wxdh
 25n10 f25n10 i25n10 e25n10 b25n10 d25n10.pdf

25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 100V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 30m DS(on) TYP) RoHS standard. I = 25A D 2 Features Fast Switching Low ON Resistance(Rdson 36m )

 0.1. Size:1281K  st
 std25n10f7 stf25n10f7 stp25n10f7.pdf

STD25N10F7, STF25N10F7, STP25N10F7 N-channel 100 V, 0.027 typ., 25 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB RDS(on) Order codes VDSS ID PTOT max.(1) DPAK STD25N10F7 100 V 0.035 25 A 40 W STF25N10F7 100 V 0.035 19 A 25 W TAB STP25N10F7 100 V 0.035 25 A 50 W 1. @ VGS = 10 V 3 3

 9.1. Size:147K  vishay
 sqd25n15.pdf

SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 150 Definition RDS(on) ( ) at VGS = 10 V 0.052 TrenchFET Power MOSFET ID (A) 25 Package with Low Thermal Resistance Configuration Single AEC-Q101 Qualifiedd D TO-252 Compliant to RoHS Directive 2002/95/EC

 9.2. Size:145K  vishay
 sud25n15.pdf

SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.052 at VGS = 10 V 25 150 PWM Optimized 0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 Primary Side Switch D Drain Connec

 9.3. Size:168K  vishay
 sqd25n15-52.pdf

SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 150 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.052 100 % Rg and UIS Tested ID (A) 25 AEC-Q101 Qualified Configuration Single Material categorization D TO-252 For definitions of compli

 9.4. Size:162K  vishay
 sud25n15-52.pdf

SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.052 at VGS = 10 V 25 150 PWM Optimized 0.060 at VGS = 6 V 23 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 Primary Side Switch D Drain Connec

 9.5. Size:410K  cet
 ceu25n15l ced25n15l.pdf

CED25N15L/CEU25N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 25A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXI

 9.6. Size:192K  inchange semiconductor
 sud25n15-52.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUD25N15-52 FEATURES TrenchFET Power MOSFET 175 Junction Temperature 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION D Primary Side Switch ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V

 9.7. Size:208K  inchange semiconductor
 sud25n15-52-e3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUD25N15-52-E3 FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100 % Rg and UIS Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION D Primary Side Switch ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V