18P10 Todos los transistores

 ..1. Size:1046K  cn wxdh
 18p10 18p10f 18p10i 18p10e 18p10b 18p10d.pdf

18P10/18P10F/18P10I 18P10E/18P10B/18P10D 13A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used V =-100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 165m DS(on) (TYP) standard. I = -13A D 2 Features Low on resistance Low gate charge

 0.1. Size:654K  mcc
 mcu18p10.pdf

MCU18P10 Features High Density Cell Design for Ultra Low RDS(on) Advanced Trench Process Technology ESD Protection Rugged and Reliable P-CHANNEL Epoxy Meets UL 94 V-0 Flammability Rating MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant.

 0.2. Size:288K  utc
 utt18p10l-tn3-r utt18p10g-tn3-r utt18p10l-ta3-t utt18p10g-ta3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

 0.3. Size:275K  utc
 utt18p10.pdf

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

 0.4. Size:200K  ape
 ap18p10agh.pdf

AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching

 0.5. Size:174K  ape
 ap18p10gh.pdf

AP18P10GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-r

 0.6. Size:65K  ape
 ap18p10aghj-hf.pdf

AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching

 0.7. Size:169K  ape
 ap18p10gm.pdf

AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP18P10 series are

 0.8. Size:165K  ape
 ap18p10agj.pdf

AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching

 0.9. Size:172K  ape
 ap18p10gk.pdf

AP18P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D Simple Drive Requirement RDS(ON) 160m S Fast Switching Characteristic ID -3.1A D RoHS Compliant & Halogen-Free SOT-223 G D Description AP18P10 series are from Advanced Power innovated design and silicon process technology to

 0.10. Size:135K  ape
 ap18p10gs.pdf

AP18P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G D re

 0.11. Size:153K  ape
 ap18p10gi.pdf

AP18P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS -100V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -12A G D TO-220CFM(I) S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desi

 0.12. Size:91K  ape
 ap18p10gk-hf.pdf

AP18P10GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D Simple Drive Requirement RDS(ON) 160m S Fast Switching Characteristic ID -3.1A D RoHS Compliant & Halogen-Free SOT-223 G D Description AP18P10 series are from Advanced Power innovated design and silicon process technology to

 0.13. Size:102K  ape
 ap18p10gh-hf ap18p10gj-hf.pdf

AP18P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G

 0.14. Size:94K  ape
 ap18p10gm-hf.pdf

AP18P10GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS -100V D D D Simple Drive Requirement RDS(ON) 180m D Fast Switching Characteristic ID -2.7A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination

 0.15. Size:170K  ape
 ap18p10gj.pdf

AP18P10GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 0.16. Size:1367K  feihonltd
 fhd18p10a.pdf

P P-CHANNEL MOSFET FHD18P10A MAIN CHARACTERISTICS FEATURES ID -18 A Low gate charge VDSS -100 V Crss ( 75pF) Low Crss (typical 75pF ) Rdson-typ @Vgs=-10V 92m Fast switching Rdson-typ @Vgs=-4.5V 95m 100% 100% avalanche tested Qg-typ 37

 0.17. Size:594K  way-on
 wmk18p10ts.pdf

WMK18P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMK18P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features V = -100V, I = -18A DS D S D G R

 0.18. Size:605K  way-on
 wmo18p10ts.pdf

WMO18P10TS 100V P-Channel Enhancement Mode Power MOSFET Description WMO18P10TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S V = -100V, I = -18A G DS D TO-252 R

 0.19. Size:508K  winsok
 wsr18p10.pdf

WSR18P10 P-Ch MOSFET General Description Product Summery The WSR18P10 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -100V 80m -25A for most of the small power switching and load switch applications. Applications The WSR18P10 meet the RoHS and Green Product requirement with ful

 0.20. Size:451K  cn wuxi unigroup
 ttd18p10at ttp18p10at.pdf

TTD18P10AT, TTP18P10AT Wuxi Unigroup Microelectronics Company 100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching Applications APPLICATIONS Load Switches Battery Switch Device Marking and Package Information Device Package Marking TTP18P10AT TO-220 18P10AT TTD18P10AT TO

 0.21. Size:514K  cn hmsemi
 hm18p10.pdf

HM18P10 P-Channel Enhancement Mode Power MOSFET Description The HM18P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

 0.22. Size:460K  cn hmsemi
 hm18p10k.pdf

8 K P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)