18P10B Todos los transistores

 

18P10B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 18P10B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27.3 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: TO251
 

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18P10B Datasheet (PDF)

 ..1. Size:1046K  cn wxdh
18p10 18p10f 18p10i 18p10e 18p10b 18p10d.pdf pdf_icon

18P10B

18P10/18P10F/18P10I18P10E/18P10B/18P10D13A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 165mDS(on) (TYP)standard.I = -13AD2 Features Low on resistance Low gate charge

 9.1. Size:654K  mcc
mcu18p10.pdf pdf_icon

18P10B

MCU18P10Features High Density Cell Design for Ultra Low RDS(on) Advanced Trench Process Technology ESD Protection Rugged and ReliableP-CHANNEL Epoxy Meets UL 94 V-0 Flammability RatingMOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant.

 9.2. Size:288K  utc
utt18p10l-tn3-r utt18p10g-tn3-r utt18p10l-ta3-t utt18p10g-ta3-t.pdf pdf_icon

18P10B

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET usingUTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

 9.3. Size:275K  utc
utt18p10.pdf pdf_icon

18P10B

UNISONIC TECHNOLOGIES CO., LTD UTT18P10 Power MOSFET 100V, 18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTCs advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON)

Otros transistores... D640 , D740 , D7N60 , D7N70 , D80N06 , D8N50 , D9N65 , 18P10 , 12N60 , 18P10D , 18P10E , 18P10F , 18P10I , D10N70 , D110N04 , D120N10ZR , CMP3006-VB .

History: SH8J62 | BRCS045N10SHRA | NCE60P09K | TPB65R160C | CPH5871 | APT20M16LFLLG | APT20M34BFLLG

 

 
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