D110N04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D110N04
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 88 nS
Cossⓘ - Capacitancia de salida: 590 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de D110N04 MOSFET
D110N04 Datasheet (PDF)
110n04 f110n04 i110n04 e110n04 b110n04 d110n04.pdf

110N04/F110N04/I110N04/E110N04/B110N04/D110N04160A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs UsedV = 40VDSSadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theR = 3.5mDS(on) TYP)RoHS standard.I = 160AD2 Features Fast Switching Low ON Resistance(Rdson
ntd110n02r.pdf

NTD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge V(BR)DSS RDS(on) TYP ID MAX Optimized for High Side Switching Requirements in24 V 4.1 mW @ 10 V 110 AHigh-Efficiency DC-DC Converters Pb-Fre
ntd110n02rg std110n02rt4g.pdf

NTD110N02R, STD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements inHigh-Efficiency DC-DC Converter
std110n02r.pdf

NTD110N02R, STD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performancehttp://onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements inHigh-Efficiency DC-DC Converter
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .



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