D110N04 Datasheet. Equivalente

 ..1. Size:1381K  cn wxdh
 110n04 f110n04 i110n04 e110n04 b110n04 d110n04.pdf

110N04/F110N04/I110N04/ E110N04/B110N04/D110N04 160A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used V = 40V DSS advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the R = 3.5m DS(on) TYP) RoHS standard. I = 160A D 2 Features Fast Switching Low ON Resistance(Rdson

 8.1. Size:68K  onsemi
 ntd110n02r.pdf

NTD110N02R Power MOSFET 24 V, 110 A, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss http //onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge V(BR)DSS RDS(on) TYP ID MAX Optimized for High Side Switching Requirements in 24 V 4.1 mW @ 10 V 110 A High-Efficiency DC-DC Converters Pb-Fre

 8.2. Size:131K  onsemi
 ntd110n02rg std110n02rt4g.pdf

NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss http //onsemi.com Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converter

 8.3. Size:93K  onsemi
 std110n02r.pdf

NTD110N02R, STD110N02R Power MOSFET 24 V, 110 A, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converter

 8.4. Size:628K  crhj
 crtd110n03l.pdf

CRTD110N03L VDSS 30V Features RDS(on) Vgs=10V typ. 9m Lead free and Green Device Available max. 11m Low Rds-on to Minimize Conductive Loss RDS(on) Vgs=4.5V typ. 11m High avalanche Current max. 13m ID @ Vgs=10V (Silicon limited) 45A ID (Package limited) 20A Application Power Tool Boost Converters for LED Lighting SMPS TO252 Absolute Maximum Rat

 8.5. Size:4779K  maple semi
 sld110n02tb.pdf

SLD110N02TB 20V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 106.5A, 20V, RDS(on),Typ = 2.4m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 52nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse

 8.6. Size:972K  cn hunteck
 hgd110n08al hgi110n08al.pdf

HGD110N08AL , HGI110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 50 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in

 8.7. Size:983K  cn hunteck
 hgd110n08a hgi110n08a.pdf

HGD110N08A , HGI110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 51 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit