DH020N03I Todos los transistores

 

DH020N03I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH020N03I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 278 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 120 nS
   Cossⓘ - Capacitancia de salida: 787 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: TO262
 

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DH020N03I Datasheet (PDF)

 ..1. Size:1166K  cn wxdh
 dh020n03 dh020n03f dh020n03i dh020n03e dh020n03b dh020n03d.pdf pdf_icon

DH020N03I

DH020N03/DH020N03F/DH020N03I/DH020N03E/DH020N03B/DH020N03D200A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.0mDS(on) (TYP)standard.13 SI = 200AD2 Features Low on res

 6.1. Size:704K  cn wxdh
 dh020n03p.pdf pdf_icon

DH020N03I

DH020N03P160A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 160AD2 Features Low on resistance Low gate charge Fast switching

Otros transistores... D10N70 , D110N04 , D120N10ZR , CMP3006-VB , 2N3368 , 2N3369 , 2N3370 , DH020N03F , RFP50N06 , DH020N03P , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , DCC030M120G2 , DCC040M65G2 , DCC060M65G2 , DCC075M120G2C .

History: AUIRF7736M2TR1 | NTD4804NA-1G | BF1202WR

 

 
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