DCCF020M65G2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DCCF020M65G2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 312 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 22 V

|Id|ⓘ - Corriente continua de drenaje: 92 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 281 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TO247-4

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DCCF020M65G2 datasheet

 ..1. Size:1880K  cn wxdh
 dcc020m65g2 dccf020m65g2.pdf pdf_icon

DCCF020M65G2

DCC020M65G2/DCCF020M65G2 92A 650V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency

 9.1. Size:1422K  cn wxdh
 dcc060m65g2 dccf060m65g2.pdf pdf_icon

DCCF020M65G2

DCC060M65G2/DCCF060M65G2 41A 650V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency

 9.2. Size:820K  cn wxdh
 dccf016m120g3.pdf pdf_icon

DCCF020M65G2

DCCF016M120G3 1200V/16m /110A SiC MOSFET Features Key Parameters VDS Higher System Efficiency 1200V RDS(on)typ Reduced Cooling Requirements 16m ID 175 operating temperature 110A Increased Power Density Vth 2.5V Increased System Switching Frequency Applications Solar and UPS inverters Power Supplies High Voltage DC/DC Converters Switch Mod

 9.3. Size:2836K  cn wxdh
 dcc016m120g2 dccf016m120g2.pdf pdf_icon

DCCF020M65G2

DCC016M120G2/DCCF016M120G2 120A 1200V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequ

MOSTRAR MÁS

Otros transistores... DCC030M120G2, DCC040M65G2, DCC060M65G2, DCC075M120G2C, DCC080M120A, DCC160M120G1, DCCF016M120G2, DCCF016M120G3, AO4407, DH100P40D, DH100P40E, DH100P40F, DH100P40I, DH100P70, DH100P70E, DH100P70F, DH100P70I