DH100P40I Todos los transistores

 

DH100P40I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH100P40I
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 145 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO262
 

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DH100P40I Datasheet (PDF)

 ..1. Size:1020K  cn wxdh
 dh100p40 dh100p40f dh100p40i dh100p40e.pdf pdf_icon

DH100P40I

DH100P40/DH100P40F/DH100P40I/DH100P40E40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedVDSS = -100Vadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsRDS =31m(on) (TYP)with the RoHS standard.ID = -40A2 Features Fast Switching Low ON Resistance Low Gate Ch

 6.1. Size:788K  cn wxdh
 dh100p40d.pdf pdf_icon

DH100P40I

DH100P40D40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, usedV = -100VDSSadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsR =31mDS(on) (TYP)with the RoHS standard.I = -40AD2 Features Fast switching Low on gate charge Low reverse Transfer capacitances

 8.1. Size:1193K  china
 dh100p30.pdf pdf_icon

DH100P40I

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

 8.2. Size:1100K  cn wxdh
 dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf pdf_icon

DH100P40I

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

MOSTRAR MÁS

Otros transistores... DCC080M120A , DCC160M120G1 , DCCF016M120G2 , DCCF016M120G3 , DCCF020M65G2 , DH100P40D , DH100P40E , DH100P40F , P0903BDG , DH100P70 , DH100P70E , DH100P70F , DH100P70I , DH105N07 , DH105N07B , DH105N07D , DH105N07E .

History: SVSP11N65DD2TRA | LTP70N06P | 2SK2884 | HSU6006 | UTT30P06L-TQ2-R | OSG60R092HF | CED6060N

 

 
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