DH100P70E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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dh100p70 dh100p70f dh100p70i dh100p70e.pdf pdf_icon

DH100P70/DH100P70F/DH100P70I/DH100P70E80A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedVDSS = -100Vtrench technology and design, provide to excellentRdson with low gate charge. Which accords with theRDS =22m(on) (TYP)RoHS standard.ID = -80A2 Features Fast switching Low on resistance Low gate ch

8.1. Size:1193K china
dh100p30.pdf pdf_icon

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

8.2. Size:788K cn wxdh
dh100p40d.pdf pdf_icon

DH100P40D40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, usedV = -100VDSSadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsR =31mDS(on) (TYP)with the RoHS standard.I = -40AD2 Features Fast switching Low on gate charge Low reverse Transfer capacitances

8.3. Size:1100K cn wxdh
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf pdf_icon

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

8.4. Size:1020K cn wxdh
dh100p40 dh100p40f dh100p40i dh100p40e.pdf pdf_icon

DH100P40/DH100P40F/DH100P40I/DH100P40E40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedVDSS = -100Vadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsRDS =31m(on) (TYP)with the RoHS standard.ID = -40A2 Features Fast Switching Low ON Resistance Low Gate Ch

8.5. Size:1238K cn wxdh
dh100p30d.pdf pdf_icon

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package

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dh100p25 dh100p25f dh100p25i dh100p25e dh100p25b dh100p25d.pdf pdf_icon

DH100P25/DH100P25F/DH100P25I/DH100P25E/DH100P25B/DH100P25D25A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =72mwith the RoHS standard.I = -25AD2 Features Fast Switching Low ON

8.7. Size:1100K cn wxdh
dh100p28 dh100p28f dh100p28i dh100p28e dh100p28b dh100p28d.pdf pdf_icon

DH100P28/DH100P28F/DH100P28IDH100P28E/DH100P28B/DH100P28D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on resista

8.8. Size:537K cn wxdh
dh100p18v.pdf pdf_icon

DH100P18V-6A -100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 160mDS(on) (TYP)standard.I = -6AD2 Features Low on resistance Low gate charge Fast switching Low reverse

8.9. Size:1048K cn wxdh
dh100p18 dh100p18f dh100p18i dh100p18e dh100p18b dh100p18d.pdf pdf_icon

DH100P18DH100P18F/DH100P18IDH100P18E/DH100P18B/DH100P18D13A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 165mDS(on) (TYP)standard.I = -13AD2 Features Low on resistance Low

8.10. Size:1100K cn wxdh
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf pdf_icon

DH100P30C/DH100P30CF/DH100P30CIDH100P30CE/DH100P30CB/DH100P30CD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 40mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r

8.11. Size:1146K cn wxdh
dh100p35 dh100p35f dh100p35i dh100p35e dh100p35b dh100p35d.pdf pdf_icon

DH100P35/DH100P35F/DH100P35I/DH100P35E/DH100P35B/DH100P35D35A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedVDSS = -100Vadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsRDS =37m(on) (TYP)with the RoHS standard.ID = -35A2 Features Fast Switching Low ON Resista

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