FQPF8N90C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF8N90C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 60 W
Tensión drenaje-fuente (Vds): 900 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 5 V
Carga de compuerta (Qg): 35 nC
Resistencia drenaje-fuente RDS(on): 1.9 Ohm
Empaquetado / Estuche: TO220F
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FQPF8N90C Datasheet (PDF)
1.1. fqp8n90c fqpf8n90c.pdf 
Size:865K _fairchild_semi
QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc
4.1. fqpf8n60cf.pdf Size:750K _fairchild_semi
February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast swi
4.2. fqpf8n80cydtu.pdf Size:1252K _fairchild_semi
January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 35 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has
4.3. fqpf8n60ct fqpf8n60cydtu.pdf Size:925K _fairchild_semi
® QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to
4.4. fqp8n60c fqpf8n60c.pdf Size:927K _fairchild_semi
QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc
4.5. fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf Size:1280K _fairchild_semi
January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especial
Otros transistores... FQPF7P20 , FQPF85N06 , FQPF8N60C , FDD24AN06L_F085 , FQPF8N60CF , FDMS7680 , FQPF8N80C , FQD5N15 , 40673 , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N .
