FQPF8N90C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQPF8N90C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
Paquete / Cubierta: TO220F
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FQPF8N90C Datasheet (PDF)
fqp8n90c fqpf8n90c.pdf

QFETFQP8N90C/FQPF8N90C900V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to
fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has
fqpf8n80cydtu.pdf

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has
Otros transistores... FQPF7P20 , FQPF85N06 , FQPF8N60C , FDD24AN06LF085 , FQPF8N60CF , FDMS7680 , FQPF8N80C , FQD5N15 , IRF730 , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N .



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