FQPF8N90C Todos los transistores

 

FQPF8N90C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF8N90C

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 35 nC

Resistencia drenaje-fuente RDS(on): 1.9 Ohm

Empaquetado / Estuche: TO220F

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FQPF8N90C Datasheet (PDF)

1.1. fqp8n90c fqpf8n90c.pdf Size:865K _fairchild_semi

FQPF8N90C
FQPF8N90C

QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.3A, 900V, RDS(on) = 1.9? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc

4.1. fqpf8n60cf.pdf Size:750K _fairchild_semi

FQPF8N90C
FQPF8N90C

February 2006 TM FRFET FQPF8N60CF 600V N-Channel MOSFET Features Description 6.26A, 600V, RDS(on) = 1.5? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast swi

4.2. fqpf8n80cydtu.pdf Size:1252K _fairchild_semi

FQPF8N90C
FQPF8N90C

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 35 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology has

 4.3. fqpf8n60ct fqpf8n60cydtu.pdf Size:925K _fairchild_semi

FQPF8N90C
FQPF8N90C

® QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 12 pF) This advanced technology has been especially tailored to

4.4. fqp8n60c fqpf8n60c.pdf Size:927K _fairchild_semi

FQPF8N90C
FQPF8N90C

QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to Fast switc

 4.5. fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf Size:1280K _fairchild_semi

FQPF8N90C
FQPF8N90C

January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been especial

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