DH300N08B Todos los transistores

 

DH300N08B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH300N08B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 78 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
   Paquete / Cubierta: TO251
 

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DH300N08B Datasheet (PDF)

 ..1. Size:1374K  cn wxdh
 dh300n08 dh300n08f dh300n08i dh300n08e dh300n08b dh300n08d.pdf pdf_icon

DH300N08B

DH300N08/DH300N08F/DH300N08I/DH300N08E/DH300N08B/DH300N08D19A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 30mDS(on) (TYP)standard.13 SI = 19AD2 Features Low on resista

 9.1. Size:833K  cn wxdh
 dh300p06l.pdf pdf_icon

DH300N08B

DH300P06L-50A -60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV = -60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 22mDS(on) (TYP)standard.I = -50AD2 Features Low on resistance Low gate charge Fast switching Low reverse

 9.2. Size:1445K  cn wxdh
 dh300p06 dh300p06f dh300p06i dh300p06e dh300p06b dh300p06d.pdf pdf_icon

DH300N08B

DH300P06/DH300P06F/DH300P06IDH300P06E/DH300P06B/DH300P06D30A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =28mDS(on) (TYP)RoHS standard.I = -30AD2 Features Fast switching Low on resist

Otros transistores... DH170P04V , DH1K1N10 , DH1K1N10B , DH1K1N10D , DH1K1N10E , DH1K1N10F , DH1K1N10I , DH300N08 , IRF540N , DH300N08D , DH300N08E , DH300N08F , DH300N08I , DH300P06 , DH300P06B , DH300P06D , DH300P06E .

History: CHM3055ZGP | AUIRF7799L2TR

 

 
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