DH100P18B Todos los transistores

 

DH100P18B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH100P18B
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27.3 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: TO251
 

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DH100P18B Datasheet (PDF)

 ..1. Size:1048K  cn wxdh
 dh100p18 dh100p18f dh100p18i dh100p18e dh100p18b dh100p18d.pdf pdf_icon

DH100P18B

DH100P18DH100P18F/DH100P18IDH100P18E/DH100P18B/DH100P18D13A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 165mDS(on) (TYP)standard.I = -13AD2 Features Low on resistance Low

 6.1. Size:537K  cn wxdh
 dh100p18v.pdf pdf_icon

DH100P18B

DH100P18V-6A -100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 160mDS(on) (TYP)standard.I = -6AD2 Features Low on resistance Low gate charge Fast switching Low reverse

 8.1. Size:1193K  china
 dh100p30.pdf pdf_icon

DH100P18B

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

 8.2. Size:788K  cn wxdh
 dh100p40d.pdf pdf_icon

DH100P18B

DH100P40D40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, usedV = -100VDSSadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsR =31mDS(on) (TYP)with the RoHS standard.I = -40AD2 Features Fast switching Low on gate charge Low reverse Transfer capacitances

MOSTRAR MÁS

Otros transistores... DH300P06F , DH300P06I , DH300P06L , DH3205A , DH3N90 , DH100N03B13 , DH100N06 , DH100P18 , P55NF06 , DH100P18D , DH100P18E , DH100P18F , DH100P18I , DH100P18V , DH100P25 , DH100P25B , DH100P25D .

History: IXTH16N10D2 | IXTH160N10T | BF982 | DH300P06I | IPB020N08N5 | DH300P06E | DH100N03B13

 

 
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