DH100P18F Todos los transistores

 

DH100P18F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH100P18F
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27.3 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.185 Ohm
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

DH100P18F Datasheet (PDF)

 ..1. Size:1048K  cn wxdh
 dh100p18 dh100p18f dh100p18i dh100p18e dh100p18b dh100p18d.pdf pdf_icon

DH100P18F

DH100P18DH100P18F/DH100P18IDH100P18E/DH100P18B/DH100P18D13A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 165mDS(on) (TYP)standard.I = -13AD2 Features Low on resistance Low

 6.1. Size:537K  cn wxdh
 dh100p18v.pdf pdf_icon

DH100P18F

DH100P18V-6A -100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets usedV =-100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 160mDS(on) (TYP)standard.I = -6AD2 Features Low on resistance Low gate charge Fast switching Low reverse

 8.1. Size:1193K  china
 dh100p30.pdf pdf_icon

DH100P18F

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

 8.2. Size:788K  cn wxdh
 dh100p40d.pdf pdf_icon

DH100P18F

DH100P40D40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, usedV = -100VDSSadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsR =31mDS(on) (TYP)with the RoHS standard.I = -40AD2 Features Fast switching Low on gate charge Low reverse Transfer capacitances

MOSTRAR MÁS

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IRFR9014PBF | SVF7N60CF | IRF7309IPBF | CS7N65A3R | WFY3N02 | APT904R2AN | EY4409

 

 
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