FQPF9P25 Todos los transistores

 

FQPF9P25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQPF9P25

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 29 nC

Resistencia drenaje-fuente RDS(on): 0.62 Ohm

Empaquetado / Estuche: TO220F

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FQPF9P25 Datasheet (PDF)

1.1. fqpf9p25.pdf Size:578K _fairchild_semi

FQPF9P25
FQPF9P25

December 2000 TM QFET QFET QFET QFET FQPF9P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.0A, -250V, RDS(on) = 0.62? @VGS = -10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 27 pF) This advanced technology is especially tai

1.2. fqpf9p25ydtu.pdf Size:3590K _fairchild_semi

FQPF9P25
FQPF9P25

December 2014 FQPF9P25YDTU P-Channel QFET® MOSFET -250 V, -6 A, 620 mΩ Description Features This P-Channel enhancement mode power MOSFET is -6 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = -3 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 29 nC) technology has been especia

 5.1. fqp9n50c fqpf9n50c.pdf Size:845K _fairchild_semi

FQPF9P25
FQPF9P25

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9 A, 500V, RDS(on) = 0.8 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fast swit

5.2. fqpf9n08l.pdf Size:553K _fairchild_semi

FQPF9P25
FQPF9P25

December 2000 TM QFET QFET QFET QFET FQPF9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.7 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology i

 5.3. fqp90n10v2 fqpf90n10v2.pdf Size:919K _fairchild_semi

FQPF9P25
FQPF9P25

® QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 147 nC) planar stripe, DMOS technology. • Low Crss ( typical 300 pF) This advanced technology has been especially tail

5.4. fqpf9n50ct fqpf9n50cydtu.pdf Size:844K _fairchild_semi

FQPF9P25
FQPF9P25

TM QFET FQP9N50C/FQPF9N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 24 pF) This advanced technology has been especially tailored to

 5.5. fqpf9n08.pdf Size:549K _fairchild_semi

FQPF9P25
FQPF9P25

December 2000 TM QFET QFET QFET QFET FQPF9N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 80V, RDS(on) = 0.21Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.9 nC) planar stripe, DMOS technology. • Low Crss ( typical 13 pF) This advanced technology is espec

5.6. fqpf9n50c.pdf Size:770K _fairchild_semi

FQPF9P25
FQPF9P25

November 2013 FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ Description Features These N-Channel enhancement mode power field effect 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild s proprietary, ID = 4.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 28 nC) technology has been especially tailored to m

5.7. fqpf9n15.pdf Size:745K _fairchild_semi

FQPF9P25
FQPF9P25

May 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 6.9A, 150V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been esp

5.8. fqp9n25c fqpf9n25ct fqpf9n25cydtu.pdf Size:1134K _fairchild_semi

FQPF9P25
FQPF9P25

® QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.8A, 250V, RDS(on) = 0.43Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 45.5 pF) This advanced technology has been especially tailor

5.9. fqp9n90c fqpf9n90c.pdf Size:842K _fairchild_semi

FQPF9P25
FQPF9P25

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.0 A, 900V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45nC) planar stripe, DMOS technology. Low Crss ( typical 14pF) This advanced technology has been especially tailored to Fast swit

5.10. fqpf9n30.pdf Size:659K _fairchild_semi

FQPF9P25
FQPF9P25

May 2000 TM QFET QFET QFET QFET FQPF9N30 300V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 6.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 17 nC) planar stripe, DMOS technology. • Low Crss ( typical 16 pF) This advanced technology has been esp

5.11. fqpf9n90ct.pdf Size:840K _fairchild_semi

FQPF9P25
FQPF9P25

TM QFET FQP9N90C/FQPF9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.0 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45nC) planar stripe, DMOS technology. • Low Crss ( typical 14pF) This advanced technology has been especially tailored to

5.12. fqpf9n50cf.pdf Size:765K _fairchild_semi

FQPF9P25
FQPF9P25

December 2005 TM FRFET FQPF9N50CF 500V N-Channel MOSFET Features Description 9A, 500V, RDS(on) = 0.85? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC) DMOS technology. Low Crss (typical 24pF) This advanced technology has been especially tailored to mini- Fast

5.13. fqp9n25c fqpf9n25c.pdf Size:1136K _fairchild_semi

FQPF9P25
FQPF9P25

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailored to Fast

5.14. fqpf9n50ydtu fqpf9n50 fqpf9n50t.pdf Size:712K _fairchild_semi

FQPF9P25
FQPF9P25

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 5.3A, 500V, RDS(on) = 0.73Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 28 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been

Otros transistores... FQPF8N60CF , FDMS7680 , FQPF8N80C , FQD5N15 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , 2SK163 , FQS4900 , FCI25N60N , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C .

 

 
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