FQS4903 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FQS4903
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2 W
Tensión drenaje-fuente (Vds): 500 V
Tensión compuerta-fuente (Vgs): 25 V
Corriente continua de drenaje (Id): 0.37 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 6.2 Ohm
Empaquetado / Estuche: SOIC
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FQS4903 Datasheet (PDF)
1.1. fqs4903.pdf 
Size:734K _fairchild_semi
May 2000 TM QFET QFET QFET QFET 500V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 0.37A, 500V, RDS(on) = 6.2? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.5 pF) This advanced technology has been especiall
4.1. fqs4900.pdf Size:1100K _fairchild_semi
August 2000 TM QFET QFET QFET QFET FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power N-Channel 1.3A, 60V, RDS(on) = 0.55 ? @ VGS = 10 V field effect transistors are produced using Fairchilds RDS(on) = 0.65 ? @ VGS = 5 V proprietary, planar stripe, DMOS technology. P-Channel -0.3A, -300V, RDS(on) = 15.5 ? @ VG
4.2. fqs4901.pdf Size:721K _fairchild_semi
May 2000 TM QFET QFET QFET QFET 400V DuaI N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 0.45A, 400V, RDS(on) = 4.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has b
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