DH100P28I Todos los transistores

 

DH100P28I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH100P28I
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 168 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 125 nC
   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 176 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO262
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DH100P28I Datasheet (PDF)

 ..1. Size:1100K  cn wxdh
 dh100p28 dh100p28f dh100p28i dh100p28e dh100p28b dh100p28d.pdf pdf_icon

DH100P28I

DH100P28/DH100P28F/DH100P28IDH100P28E/DH100P28B/DH100P28D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on resista

 7.1. Size:1002K  cn wxdh
 dh100p25 dh100p25f dh100p25i dh100p25e dh100p25b dh100p25d.pdf pdf_icon

DH100P28I

DH100P25/DH100P25F/DH100P25I/DH100P25E/DH100P25B/DH100P25D25A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =72mwith the RoHS standard.I = -25AD2 Features Fast Switching Low ON

 8.1. Size:1193K  china
 dh100p30.pdf pdf_icon

DH100P28I

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON

 8.2. Size:788K  cn wxdh
 dh100p40d.pdf pdf_icon

DH100P28I

DH100P40D40A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, usedV = -100VDSSadvanced trench technology and design, provide toexcellent Rdson with low gate charge. Which accordsR =31mDS(on) (TYP)with the RoHS standard.I = -40AD2 Features Fast switching Low on gate charge Low reverse Transfer capacitances

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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