DH100P30AE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH100P30AE
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 168 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 47 nS
Cossⓘ - Capacitancia de salida: 176 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de DH100P30AE MOSFET
DH100P30AE Datasheet (PDF)
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf

DH100P30A/DH100P30AF/DH100P30AIDH100P30AE/DH100P30AB/DH100P30AD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 47mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r
dh100p30.pdf

DH100P30/DH100P30F/DH100P30I/DH100P30E/DH100P30B/DH100P30D30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel Enhanced VDMOSFETs, UsedV -100VDSS =advanced trench technology and design, provide toexcellent R with low gate charge. Which accords RDSON DS(on) TYP) =35mwith the RoHS standard.I = -30AD2 Features Fast Switching Low ON
dh100p30d.pdf

DH100P30D -100V/33m/-35A P-MOSFET Features Key ParametersVDS Low on resistance -100VRDS(on)typ. Low reverse transfer capacitances 33mID 100% single pulse avalanche energy test -35ACiss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nCApplications Load switch TO-252Marking & Packing InformationPart # Package
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf

DH100P30C/DH100P30CF/DH100P30CIDH100P30CE/DH100P30CB/DH100P30CD30A 100V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhancement mode power mosfets used2 Dadvanced trench technology design, provided excellent V = -100VDSSRdson and low gate charge. Which accords with the RoHSGR = 40mDS(on) (TYP)standard.13 SID =-30A2 Features Low on r
Otros transistores... DH100P28B , DH100P28D , DH100P28E , DH100P28F , DH100P28I , DH100P30A , DH100P30AB , DH100P30AD , AO4468 , DH100P30AF , DH100P30AI , DH100P30C , DH100P30CB , DH100P30CD , DH100P30CE , DH030N03P , DH033N03 .
History: SHD218502B | 2SK1905 | IRF4104PBF | IXFH28N60P3 | 2SK2207 | AM4560C | F10V50VX2
History: SHD218502B | 2SK1905 | IRF4104PBF | IXFH28N60P3 | 2SK2207 | AM4560C | F10V50VX2



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