DH100P30C MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DH100P30C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DH100P30C

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 168 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 176 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: TO220

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DH100P30C datasheet

..1. Size:1100K cn wxdh
dh100p30c dh100p30cf dh100p30ci dh100p30ce dh100p30cb dh100p30cd.pdf pdf_icon

DH100P30C/DH100P30CF/DH100P30CI DH100P30CE/DH100P30CB/DH100P30CD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 40m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r

6.1. Size:1193K china
dh100p30.pdf pdf_icon

DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used V -100V DSS = advanced trench technology and design, provide to excellent R with low gate charge. Which accords R DSON DS(on) TYP) =35m with the RoHS standard. I = -30A D 2 Features Fast Switching Low ON

6.2. Size:1100K cn wxdh
dh100p30a dh100p30af dh100p30ai dh100p30ae dh100p30ab dh100p30ad.pdf pdf_icon

DH100P30A/DH100P30AF/DH100P30AI DH100P30AE/DH100P30AB/DH100P30AD 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel enhancement mode power mosfets used 2 D advanced trench technology design, provided excellent V = -100V DSS Rdson and low gate charge. Which accords with the RoHS G R = 47m DS(on) (TYP) standard. 1 3 S ID =-30A 2 Features Low on r

6.3. Size:1238K cn wxdh
dh100p30d.pdf pdf_icon

DH100P30D -100V/33m /-35A P-MOSFET Features Key Parameters VDS Low on resistance -100V RDS(on)typ. Low reverse transfer capacitances 33m ID 100% single pulse avalanche energy test -35A Ciss@10V 100% VDS test 5250pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 19nC Applications Load switch TO-252 Marking & Packing Information Part # Package

Otros transistores... DH100P28F, DH100P28I, DH100P30A, DH100P30AB, DH100P30AD, DH100P30AE, DH100P30AF, DH100P30AI, IRF730, DH100P30CB, DH100P30CD, DH100P30CE, DH030N03P, DH033N03, DH033N03B, DH033N03D, DH033N03E

DH100P30C Todos los transistores