DH033N04 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DH033N04

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 133 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 117 nS

Cossⓘ - Capacitancia de salida: 406 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO220

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DH033N04 datasheet

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 dh033n04 dh033n04f dh033n04i dh033n04e dh033n04b dh033n04d.pdf pdf_icon

DH033N04

DH033N04/DH033N04F/DH033N04I/ DH033N04E/DH033N04B/DH033N04D 120A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.5m DS(on) (TYP) standard. 1 3 S I = 120A D 2 Features Low on res

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 dh033n04p.pdf pdf_icon

DH033N04

DH033N04P 96A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.5m DS(on) (TYP) standard. 1 3 S I = 96A D 2 Features Low on resistance Low gate charge Fast switching

 7.1. Size:1299K  cn wxdh
 dh033n03 dh033n03f dh033n03i dh033n03e dh033n03b dh033n03d.pdf pdf_icon

DH033N04

DH033N03/DH033N03F/DH033N03I/ DH033N03E/DH033N03B/DH033N03D 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced mode power vdmosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =3.3m DS(on) (TYP) G standard. 1 I = 100A D 3 S 2 Features Low switchin

 7.2. Size:696K  cn wxdh
 dh033n03r.pdf pdf_icon

DH033N04

DH033N03R 65A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced mode power vdmosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =3.4m DS(on) (TYP) G standard. 1 I = 65A 3 S D 2 Features = Low switching loss = Low on resistance = Low gate c

MOSTRAR MÁS

Otros transistores... DH030N03P, DH033N03, DH033N03B, DH033N03D, DH033N03E, DH033N03F, DH033N03I, DH033N03R, IRF1404, DH033N04B, DH033N04D, DH033N04E, DH033N04F, DH033N04I, DH033N04P, DH035N04, DH100P30CF