DHS020N04E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DHS020N04E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 74.3 nC
trⓘ - Tiempo de subida: 95.6 nS
Cossⓘ - Capacitancia de salida: 2180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
Paquete / Cubierta: TO263
DHS020N04E Datasheet (PDF)
dhs020n04 dhs020n04f dhs020n04i dhs020n04e.pdf

DHS020N04/DHS020N04F/DHS020N04I/DHS020N04E180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Lo
dhs020n04p.pdf

DHS020N04P170A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 1.3mDS(on) (TYP)the RoHS standard.13 SI = 170AD2 Features Low on resistance Low gate charge Fast
dhs020n04b dhs020n04d.pdf

DHS020N04B/DHS020N04D180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced Splite gate technology design, providedexcellent Rdson and low gate charge. Which accords with GR = 1.7mDS(on) (TYP)1the RoHS standard.3 SI = 180AD2 Features Fast switching Low on resistance Lo
dhs020n88 dhs020n88e dhs020n88i.pdf

DHS020N88/DHS020N88E/DHS020N88I180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 85VDSSadvanced splite gate trench technology design, provided2 DR = 1.9mTO-220&TO-262DS(on) (TYP)excellent Rdson and low gate charge. Which accords withthe RoHS standard.R = 1.6mTO-263DS(on) (TYP)G1I
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SIR626DP
History: SIR626DP



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