DHS021N04B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHS021N04B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 95.6 nS

Cossⓘ - Capacitancia de salida: 1611 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: TO251

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DHS021N04B datasheet

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 dhs021n04b dhs021n04d.pdf pdf_icon

DHS021N04B

DHS021N04B&DHS021N04D 120A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 40V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 2m DS(on) (TYP) the RoHS standard. G 1 I Silicon limit = 170A D 3 S 2 Features I Package limit 12

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 dhs021n04 dhs021n04e.pdf pdf_icon

DHS021N04B

DHS021N04&DHS021N04E 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced splite gate trench technology design, provided R = 2.1m TO-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. 1 R = 1.8m TO-263 DS(on) (TYP) 3 S I = 180A D 2

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 dhs021n04p.pdf pdf_icon

DHS021N04B

DHS021N04P 100A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 40V DSS advanced splite gate trench technology design, provided 2 D excellent Rdson and low gate charge. Which accords with R = 1.4m DS(on) (TYP) the RoHS standard. G 1 I Silicon limit = 170A D 3 S 2 Features I Package limit 100A = D

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 dhs022n06 dhs022n06e.pdf pdf_icon

DHS021N04B

DHS022N06/DHS022N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS advanced Splite gate technology design, provided 2 D R = 2.3m To-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 2.0m To-263 DS(on) (TYP) G 1 I (Silicon limit) = 200A D

MOSTRAR MÁS

Otros transistores... DHS020N04F, DHS020N04I, DHS020N04P, DHS020N88, DHS020N88E, DHS020N88I, DHS020N88U, DHS021N04, IRFZ46N, DHS021N04D, DHS021N04E, DHS021N04P, DHS022N06, DHS022N06E, DHB8290, DHB90N03B17, DHB90N045R