DHBSJ13N65 Todos los transistores

 

DHBSJ13N65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHBSJ13N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 28 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de DHBSJ13N65 MOSFET

   - Selección ⓘ de transistores por parámetros

 

DHBSJ13N65 PDF Specs

 ..1. Size:1649K  cn wxdh
 dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf pdf_icon

DHBSJ13N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65 DHESJ13N65/DHBSJ13N65/DHDSJ13N65 13A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 0.28 DS(on) (TYP) G RoHS standard. 1 I = 13A 3 S D 2 Features F... See More ⇒

 8.1. Size:1552K  cn wxdh
 dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf pdf_icon

DHBSJ13N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/ DHESJ11N65/DHBSJ11N65/DHDSJ11N65 11A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R = 0.33 DS(on) (TYP) RoHS standard. G 1 I = 11A 3 S D 2 Features ... See More ⇒

 9.1. Size:796K  cn wxdh
 dhdsj7n65 dhbsj7n65.pdf pdf_icon

DHBSJ13N65

DHDSJ7N65/DHBSJ7N65 7A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.56 DS(on) (TYP) G accords with the RoHS standard. 1 I = 7A 3 S D 2 Features Fast switching Low on resistance... See More ⇒

 9.2. Size:1116K  cn wxdh
 dhdsj5n65 dhbsj5n65.pdf pdf_icon

DHBSJ13N65

DHDSJ5N65/DHBSJ5N65 4.8A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.87 DS(on) (TYP) G accords with the RoHS standard. 1 I = 4.8A 3 S D 2 Features Fast switching Low on resistance Lo... See More ⇒

SHOW MORE

Otros transistores... DHS021N04P , DHS022N06 , DHS022N06E , DHB8290 , DHB90N03B17 , DHB90N045R , DHB9Z24 , DHBSJ11N65 , K2611 , DHBSJ5N65 , DHBSJ7N65 , DHBZ24B31 , DHD015N06 , DHD035N04 , DHD100N03B13 , DHD16N06 , DHD3205A .

 

 
Back to Top

 


 
.