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2N4393 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N4393
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.8 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Corriente continua de drenaje |Id|: 0.15 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Conductancia de drenaje-sustrato (Cd): 14 pF
   Resistencia entre drenaje y fuente RDS(on): 100 Ohm
   Paquete / Cubierta: TO18

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2N4393 Datasheet (PDF)

 ..1. Size:59K  vishay
2n4391 pn4391 sst4391 2n4392 pn4392 sst4392 2n4393 pn4393 sst4393.pdf

2N4393
2N4393

2N/PN/SST4391 SeriesVishay SiliconixN-Channel JFETs2N4391 PN4391 SST43912N4392 PN4392 SST43922N4393 PN4393 SST4393PRODUCT SUMMARYPart Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns)2N/PN/SST4391 4 to 10 30 5 42N/PN/SST4392 2 to 5 60 5 42N/PN/SST4393 0.5 to 3 100 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 4391

 ..2. Size:106K  central
2n4391 2n4392 2n4393.pdf

2N4393
2N4393

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 ..3. Size:29K  calogic
2n4391 2n4392 2n4393 pn4391 pn4392 pn4393 sst4391 sst4392 sst4393.pdf

2N4393
2N4393

N-Channel JFET SwitchCORPORATION2N4391 2N4393 / PN4391 PN4393 / SST4391 SST4393FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A r

 0.1. Size:49K  semelab
2n4393dcsm.pdf

2N4393
2N4393

2N4393DCSMSEMELABSMALL SIGNAL DUALNCHANNEL JFET IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEFOR HIGH RELIABILITY APPLICATIONSMECHANICAL DATADimensions in mm (inches)1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)FEATURES2 3 HERMETIC CERAMIC SURFACE MOUNT1 4A PACKAGE 0.236 5rad.(0.009) CECC SC

 0.2. Size:229K  semelab
2n4393c1a 2n4393c1b 2n4393c1c 2n4393c1d.pdf

2N4393
2N4393

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393C1 Hermetic Surface Mounted Package. Designed For High Reliability and Space Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 40V VGS Gate Source Voltage -40V VGD Gate Drain Voltage -40V IG Gate Current 50mA PD TA = 25C

 9.1. Size:237K  motorola
2n4398 2n4399 2n5745.pdf

2N4393
2N4393

Order this documentMOTOROLAby 2N4398/DSEMICONDUCTOR TECHNICAL DATA2N4347(See 2N3442)PNP Silicon High-PowerTransistors2N4398. . . designed for use in power amplifier and switching ci

 9.2. Size:158K  mospec
2n4398-99 2n5745.pdf

2N4393
2N4393

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 9.3. Size:15K  semelab
2n4392.pdf

2N4393
2N4393

2N4392MECHANICAL DATADimensions in mm (inches)JFET SWITCHING5.84 (0.230)5.31 (0.209)4.95 (0.195)N CHANNEL- DEPLETION4.52 (0.178)FEATURES LOW ON RESISTANCE0.48 (0.019)0.41 (0.016) FAST SWITCHINGdia. MILITARY OPTIONS AVAILABLE2.54 (0.100)Nom.3 12APPLICATIONS: SWITCHING APPLICATIONSTO18 METAL PACKAGEUnderside ViewPIN 1 Source PIN 2

 9.4. Size:13K  semelab
2n4391.pdf

2N4393
2N4393

2N4391MECHANICAL DATADimensions in mm (inches)JFET SWITCHING5.84 (0.230)5.31 (0.209)4.95 (0.195)N CHANNEL- DEPLETION4.52 (0.178)FEATURES LOW ON RESISTANCE0.48 (0.019)0.41 (0.016) FAST SWITCHINGdia. MILITARY OPTIONS AVAILABLE2.54 (0.100)Nom.3 12APPLICATIONS: SWITCHING APPLICATIONSTO18 METAL PACKAGEUnderside ViewPIN 1 Source PIN 2

 9.5. Size:38K  inchange semiconductor
2n4398.pdf

2N4393
2N4393

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4398 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5301 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Coll

 9.6. Size:121K  inchange semiconductor
2n4398 2n4399 2n5745.pdf

2N4393
2N4393

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4398 2N4399 2N5745 DESCRIPTION With TO-3 package Complement to type 2N5301/5302/5303 Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified o

 9.7. Size:181K  inchange semiconductor
2n4395.pdf

2N4393
2N4393

isc Silicon NPN Power Transistor 2N4395DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.8. Size:182K  inchange semiconductor
2n4396.pdf

2N4393
2N4393

isc Silicon NPN Power Transistor 2N4396DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation VoltageThe device employs the popular JEDEC TO-3100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSHigh voltage high current power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 9.9. Size:38K  inchange semiconductor
2n4399.pdf

2N4393
2N4393

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4399 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -15A Wide Area of Safe Operation Complement to Type 2N5302 APPLICATIONS Designed for use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Coll

Otros transistores... 2N3824 , 2N3824LP , 2N4391 , 2N4391CSM , 2N4392 , 2N4392CSM , 2N4393 , 2N4393CSM , IRF540 , 2N5045 , 2N5484 , 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 .

 

 
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