2SK3162 Todos los transistores

 ..1. Size:88K  renesas
 2sk3162.pdf

2SK3162 Silicon N Channel MOS FET High Speed Power Switching REJ03G1087-0400 (Previous ADE-208-735C) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

 ..2. Size:280K  inchange semiconductor
 2sk3162.pdf

isc N-Channel MOSFET Transistor 2SK3162 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 75m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 0.1. Size:102K  renesas
 rej03g1087 2sk3162ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:88K  renesas
 2sk3163.pdf

2SK3163 Silicon N Channel MOS FET High Speed Power Switching REJ03G1088-0300 (Previous ADE-208-736A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate 2. Drain G (Flange) 3. Source S

 8.2. Size:102K  renesas
 rej03g1085 2sk3160ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:108K  renesas
 rej03g1086 2sk3161lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:94K  renesas
 2sk3161.pdf

2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous ADE-208-734A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L)

 8.5. Size:102K  renesas
 rej03g1088 2sk3163ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:88K  renesas
 2sk3160.pdf

2SK3160 Silicon N Channel MOS FET High Speed Power Switching REJ03G1085-0300 (Previous ADE-208-751A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =130 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

 8.7. Size:213K  panasonic
 2sk247-2sk301-2sk316.pdf

 8.8. Size:291K  inchange semiconductor
 2sk3163.pdf

isc N-Channel MOSFET Transistor 2SK3163 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.9. Size:356K  inchange semiconductor
 2sk3161s.pdf

isc N-Channel MOSFET Transistor 2SK3161S FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.10. Size:280K  inchange semiconductor
 2sk3160.pdf

isc N-Channel MOSFET Transistor 2SK3160 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R = 170m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:282K  inchange semiconductor
 2sk3161l.pdf

isc N-Channel MOSFET Transistor 2SK3161L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid