DHFSJ17N65 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHFSJ17N65  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 39 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm

Encapsulados: TO220F

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DHFSJ17N65 datasheet

 ..1. Size:1360K  cn wxdh
 dhsj17n65 dhfsj17n65 dhisj17n65 dhesj17n65.pdf pdf_icon

DHFSJ17N65

DHSJ17N65/DHFSJ17N65 DHISJ17N65/DHESJ17N65 17A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R = 185m DS(on) (TYP) RoHS standard. G 1 I = 17A 3 S D 2 Features Fast switching Low

 8.1. Size:1552K  cn wxdh
 dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf pdf_icon

DHFSJ17N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/ DHESJ11N65/DHBSJ11N65/DHDSJ11N65 11A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R = 0.33 DS(on) (TYP) RoHS standard. G 1 I = 11A 3 S D 2 Features

 8.2. Size:1649K  cn wxdh
 dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf pdf_icon

DHFSJ17N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65 DHESJ13N65/DHBSJ13N65/DHDSJ13N65 13A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 0.28 DS(on) (TYP) G RoHS standard. 1 I = 13A 3 S D 2 Features F

 9.1. Size:1027K  cn wxdh
 dhfsj5n65.pdf pdf_icon

DHFSJ17N65

DHFSJ5N65 4.8A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.87 DS(on) (TYP) G accords with the RoHS standard. 1 I = 4.8A 3 S D 2 Features Fast switching Low on resistance Low gate cha

MOSTRAR MÁS

Otros transistores... DHF80N08B22, DHF8290, DHF85N08, DHF90N045R, DHF90N055R, DHF9Z24, DHFSJ11N65, DHFSJ13N65, IRFZ44, DHFSJ5N65, DH060N08, DH060N08B, DH060N08D, DH060N08E, DH060N08F, DH060N08I, DH065N04