DHFSJ17N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DHFSJ17N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 39 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
Paquete / Cubierta: TO220F
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DHFSJ17N65 Datasheet (PDF)
dhsj17n65 dhfsj17n65 dhisj17n65 dhesj17n65.pdf

DHSJ17N65/DHFSJ17N65DHISJ17N65/DHESJ17N6517A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 185mDS(on) (TYP)RoHS standard. G1I = 17A3 S D2 Features Fast switching Low
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DHSJ11N65/DHFSJ11N65/DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N6511A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 0.33DS(on) (TYP)RoHS standard. G1I = 11A3 S D2 Features
dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf

DHSJ13N65/DHFSJ13N65/DHISJ13N65DHESJ13N65/DHBSJ13N65/DHDSJ13N6513A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advanced2 DV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 0.28DS(on) (TYP)GRoHS standard.1I = 13A3 S D2 Features F
dhfsj5n65.pdf

DHFSJ5N654.8A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced VDMOSFETs, is using2 DV = 650VDSSadvanced super junction technology and design toprovide excellent Rdson with low gate charge. WhichR = 0.87DS(on) (TYP)Gaccords with the RoHS standard.1I = 4.8A3 S D2 Features Fast switching Low on resistance Low gate cha
Otros transistores... DHF80N08B22 , DHF8290 , DHF85N08 , DHF90N045R , DHF90N055R , DHF9Z24 , DHFSJ11N65 , DHFSJ13N65 , 10N60 , DHFSJ5N65 , DH060N08 , DH060N08B , DH060N08D , DH060N08E , DH060N08F , DH060N08I , DH065N04 .
History: IRFP448PBF | AM2318N | NCEP10N12 | NVMFD5C650NL | RU2H50S | SSM3J338R
History: IRFP448PBF | AM2318N | NCEP10N12 | NVMFD5C650NL | RU2H50S | SSM3J338R



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