DH060N08F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DH060N08F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 81 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 220 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm

Encapsulados: TO220F

  📄📄 Copiar 

 Búsqueda de reemplazo de DH060N08F MOSFET

- Selecciónⓘ de transistores por parámetros

 

DH060N08F datasheet

 ..1. Size:1336K  cn wxdh
dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf pdf_icon

DH060N08F

DH060N08/DH060N08F/DH060N08I DH060N08E/DH060N08B/DH060N08D 81A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 81A D 2 Features Low on resist

 7.1. Size:1032K  cn wxdh
dh060n07b dh060n07d.pdf pdf_icon

DH060N08F

DH060N07B/DH060N07D 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.7m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast sw

 7.2. Size:693K  cn wxdh
dh060n03r.pdf pdf_icon

DH060N08F

DH060N03R 54A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 5.3m DS(on) (TYP) G 1 2 Features I = 54A 3 S D Low switching loss Low on resistance Low gate charge Low revers

Otros transistores... DHFSJ11N65, DHFSJ13N65, DHFSJ17N65, DHFSJ5N65, DH060N08, DH060N08B, DH060N08D, DH060N08E, IRFB4115, DH060N08I, DH065N04, DH065N04B, DH065N04D, DH065N04E, DH065N04F, DH065N04I, DH065N04P