DH060N08F Todos los transistores

 

DH060N08F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DH060N08F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 81 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 220 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de DH060N08F MOSFET

   - Selección ⓘ de transistores por parámetros

 

DH060N08F PDF Specs

 ..1. Size:1336K  cn wxdh
dh060n08 dh060n08f dh060n08i dh060n08e dh060n08b dh060n08d.pdf pdf_icon

DH060N08F

DH060N08/DH060N08F/DH060N08I DH060N08E/DH060N08B/DH060N08D 81A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 81A D 2 Features Low on resist... See More ⇒

 7.1. Size:1032K  cn wxdh
dh060n07b dh060n07d.pdf pdf_icon

DH060N08F

DH060N07B/DH060N07D 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 5.7m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast sw... See More ⇒

 7.2. Size:693K  cn wxdh
dh060n03r.pdf pdf_icon

DH060N08F

DH060N03R 54A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets used advanced 2 D V = 30V DSS trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. R = 5.3m DS(on) (TYP) G 1 2 Features I = 54A 3 S D Low switching loss Low on resistance Low gate charge Low revers... See More ⇒

Otros transistores... DHFSJ11N65 , DHFSJ13N65 , DHFSJ17N65 , DHFSJ5N65 , DH060N08 , DH060N08B , DH060N08D , DH060N08E , IRFB4115 , DH060N08I , DH065N04 , DH065N04B , DH065N04D , DH065N04E , DH065N04F , DH065N04I , DH065N04P .

History: IRFPS3815 | DH060N08I

 

 
Back to Top

 


 
.