DH065N06 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DH065N06  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm

Encapsulados: TO220

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DH065N06 datasheet

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 dh065n06 dh065n06e.pdf pdf_icon

DH065N06

DH065N06/DH065N06E 120A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.2m TO-220 DS(on) (TYP) standard. G 1 R = 5m TO-263 DS(on) (TYP) 3 S 2 Features I = 120A D Low

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 dh065n06d.pdf pdf_icon

DH065N06

DH065N06D 110A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V 2 D DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5m DS(on) (TYP) standard. G 1 I = 110A D 3 S 2 Features Low on resistance Low gate charge Fast switching L

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 dh065n04p.pdf pdf_icon

DH065N06

DH065N04P 60A 40V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.3m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low gate charge Fast switching L

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 dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf pdf_icon

DH065N06

DH065N04/DH065N04FDH065N04I/ DH065N04E/DH065N04B/DH065N04D 80A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 80A D 2 Features Low on resist

MOSTRAR MÁS

Otros transistores... DH060N08I, DH065N04, DH065N04B, DH065N04D, DH065N04E, DH065N04F, DH065N04I, DH065N04P, STP75NF75, DH065N06D, DH065N06E, DHI90N045R, DHI90N055R, DHI9Z24, DHISJ11N65, DHISJ13N65, DHISJ17N65