DH065N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DH065N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de DH065N06 MOSFET
DH065N06 Datasheet (PDF)
dh065n06 dh065n06e.pdf

DH065N06/DH065N06E120A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.2mTO-220DS(on) (TYP)standard. G1R = 5mTO-263DS(on) (TYP)3 S2 FeaturesI = 120AD Low
dh065n06d.pdf

DH065N06D110A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60V2 D DSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5mDS(on) (TYP)standard. G1I = 110AD3 S2 Features Low on resistance Low gate charge Fast switching L
dh065n04p.pdf

DH065N04P60A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.3mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low gate charge Fast switching L
dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf

DH065N04/DH065N04FDH065N04I/DH065N04E/DH065N04B/DH065N04D80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resist
Otros transistores... DH060N08I , DH065N04 , DH065N04B , DH065N04D , DH065N04E , DH065N04F , DH065N04I , DH065N04P , IRFP260 , DH065N06D , DH065N06E , DHI90N045R , DHI90N055R , DHI9Z24 , DHISJ11N65 , DHISJ13N65 , DHISJ17N65 .
History: AM7153P | QM3009K | AP60T03AS | GP2M004A065XG | NCE65N460K | NTLUS4C12N | CED4204
History: AM7153P | QM3009K | AP60T03AS | GP2M004A065XG | NCE65N460K | NTLUS4C12N | CED4204



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