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DHDSJ5N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHDSJ5N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO252
 

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DHDSJ5N65 Datasheet (PDF)

 ..1. Size:1116K  cn wxdh
 dhdsj5n65 dhbsj5n65.pdf pdf_icon

DHDSJ5N65

DHDSJ5N65/DHBSJ5N654.8A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced VDMOSFETs, is using2 DV = 650VDSSadvanced super junction technology and design toprovide excellent Rdson with low gate charge. WhichR = 0.87DS(on) (TYP)Gaccords with the RoHS standard.1I = 4.8A3 S D2 Features Fast switching Low on resistance Lo

 9.1. Size:1552K  cn wxdh
 dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf pdf_icon

DHDSJ5N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/DHESJ11N65/DHBSJ11N65/DHDSJ11N6511A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedsuper junction technology and design to provide excellent 2 DV = 650VDSSRds(on) with low gate charge. Which accords with theR = 0.33DS(on) (TYP)RoHS standard. G1I = 11A3 S D2 Features

 9.2. Size:1649K  cn wxdh
 dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf pdf_icon

DHDSJ5N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65DHESJ13N65/DHBSJ13N65/DHDSJ13N6513A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advanced2 DV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 0.28DS(on) (TYP)GRoHS standard.1I = 13A3 S D2 Features F

 9.3. Size:796K  cn wxdh
 dhdsj7n65 dhbsj7n65.pdf pdf_icon

DHDSJ5N65

DHDSJ7N65/DHBSJ7N65 7A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 DV = 650V DSSadvanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.56 DS(on) (TYP)Gaccords with the RoHS standard. 1I = 7A 3 S D2 Features Fast switching Low on resistance

MOSTRAR MÁS

Otros transistores... DH081N03B , DH081N03D , DHD7N65 , DHD80N03 , DHD80N08 , DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 , IRF1405 , DHDSJ7N65 , DHDZ24B31 , DHE029N08 , DHE035N04 , DHE100N03B13 , DHE10H035R , DHE10H037R , DHE16N06 .

 

 
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