DHE10H035R Todos los transistores

 

DHE10H035R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHE10H035R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56 nS
   Cossⓘ - Capacitancia de salida: 1026 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de MOSFET DHE10H035R

 

Principales características: DHE10H035R

 ..1. Size:1098K  cn wxdh
 dh10h035r dhf10h035r dhi10h035r dhe10h035r.pdf pdf_icon

DHE10H035R

DH10H035R/DHF10H035R/ DHI10H035R/DHE10H035R 120A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 3.5m DS(on) (TYP) G standard. 1 I = 120A 3 S D 2 Features Fast switching

 6.1. Size:1160K  cn wxdh
 dh10h037r dhf10h037r dhi10h037r dhe10h037r.pdf pdf_icon

DHE10H035R

DH10H037R/DHF10H037R/ DHI10H037R/DHE10H037R 120A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Splite Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.7m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Fast Switching Low

 9.1. Size:1507K  cn wxdh
 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

DHE10H035R

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur

Otros transistores... DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , DHDSJ7N65 , DHDZ24B31 , DHE029N08 , DHE035N04 , DHE100N03B13 , EMB04N03H , DHE10H037R , DHE16N06 , DHE3205A , DHE3N90 , DHFSJ8N65 , DHFZ24B31 , DHI029N08 , DHI035N04 .

 

 
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