DHFSJ8N65 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHFSJ8N65  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 19 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm

Encapsulados: TO220F

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DHFSJ8N65 datasheet

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 dhfsj8n65.pdf pdf_icon

DHFSJ8N65

DHFSJ8N65 7.6A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.48 DS(on) (TYP) G accords with the RoHS standard. 1 I = 7.6A 3 S D 2 Features Fast switching Low on resistance

 9.1. Size:1027K  cn wxdh
 dhfsj5n65.pdf pdf_icon

DHFSJ8N65

DHFSJ5N65 4.8A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which R = 0.87 DS(on) (TYP) G accords with the RoHS standard. 1 I = 4.8A 3 S D 2 Features Fast switching Low on resistance Low gate cha

 9.2. Size:1552K  cn wxdh
 dhsj11n65 dhfsj11n65 dhisj11n65 dhesj11n65 dhbsj11n65 dhdsj11n65.pdf pdf_icon

DHFSJ8N65

DHSJ11N65/DHFSJ11N65/DHISJ11N65/ DHESJ11N65/DHBSJ11N65/DHDSJ11N65 11A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R = 0.33 DS(on) (TYP) RoHS standard. G 1 I = 11A 3 S D 2 Features

 9.3. Size:1649K  cn wxdh
 dhsj13n65 dhfsj13n65 dhisj13n65 dhesj13n65 dhbsj13n65 dhdsj13n65.pdf pdf_icon

DHFSJ8N65

DHSJ13N65/DHFSJ13N65/DHISJ13N65 DHESJ13N65/DHBSJ13N65/DHDSJ13N65 13A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 0.28 DS(on) (TYP) G RoHS standard. 1 I = 13A 3 S D 2 Features F

MOSTRAR MÁS

Otros transistores... DHE029N08, DHE035N04, DHE100N03B13, DHE10H035R, DHE10H037R, DHE16N06, DHE3205A, DHE3N90, 60N06, DHFZ24B31, DHI029N08, DHI035N04, DHI100N03B13, DHI10H035R, DHI10H037R, DHI16N06, DHI3205A