DHI100N03B13 Todos los transistores

 

DHI100N03B13 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHI100N03B13
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 50 nC
   trⓘ - Tiempo de subida: 325 nS
   Cossⓘ - Capacitancia de salida: 426 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO262
 

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DHI100N03B13 Datasheet (PDF)

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 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

DHI100N03B13

DH100N03B13/DHF100N03B13/DHI100N03B13/DHE100N03B13/DHB100N03B13/DHD100N03B13100A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.3mDS(on) (TYP)standard.13 SI = 100AD2 Featur

 9.1. Size:1160K  cn wxdh
 dh10h037r dhf10h037r dhi10h037r dhe10h037r.pdf pdf_icon

DHI100N03B13

DH10H037R/DHF10H037R/DHI10H037R/DHE10H037R120A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power MOSFETS2 DVDS = 100VUsed advanced Splite Gate technology design, providedexcellent RDSON and low gate charge. Which accords withRDS = 3.7m(on) (TYP)Gthe RoHS standard.1ID = 120A3 S2 Features Fast Switching Low

 9.2. Size:1098K  cn wxdh
 dh10h035r dhf10h035r dhi10h035r dhe10h035r.pdf pdf_icon

DHI100N03B13

DH10H035R/DHF10H035R/DHI10H035R/DHE10H035R120A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 3.5mDS(on) (TYP)Gstandard.1I = 120A3 S D2 Features Fast switching

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