DHS025N88 Todos los transistores

 

DHS025N88 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS025N88
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 384 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 205 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 118 nS
   Cossⓘ - Capacitancia de salida: 1282 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET DHS025N88

 

Principales características: DHS025N88

 ..1. Size:1358K  cn wxdh
 dhs025n88 dhs025n88f dhs025n88i dhs025n88e dhs025n88d dhs025n88b.pdf pdf_icon

DHS025N88

DHS025N88/DHS025N88F/DHS025N88I DHS025N88E/DHS025N88D/DHS025N88B 205A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 205A D 2 Feature

 7.1. Size:871K  cn wxdh
 dhs025n06 dhs025n06e.pdf pdf_icon

DHS025N88

DHS025N06/DHS025N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =60V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R =2.5 m TO-220 DS(on) (TYP) G the RoHS standard. 1 R =2.2 m TO-263 DS(on) (TYP) 3 S 2 Features I =

 7.2. Size:1171K  cn wxdh
 dhs025n10 dhs025n10e dhs025n10d dhs025n10b.pdf pdf_icon

DHS025N88

DHS025N10/DHS025N10E DHS025N10D/DHS025N10B 240A 100V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 240A D 2 Features Low on resistanc

 7.3. Size:906K  cn wxdh
 dhs025n10u.pdf pdf_icon

DHS025N88

DHS025N10U 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V =100V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 2.2m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I =180A D 2 Features Low on resistance Low gate

MOSTRAR MÁS

Otros transistores... DHD90N045R , DHS025N06 , DHS025N06E , DHS025N10 , DHS025N10B , DHS025N10D , DHS025N10E , DHS025N10U , 8205A , DHS025N88B , DHS025N88D , E110N04 , E13N50 , E20N50 , E25N10 , E50N06 , E630 .

History: E110N04 | DHS025N88D | AP60P03D

 

 
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