F13N50 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F13N50 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 195 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Encapsulados: TO220F
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F13N50 datasheet
..1. Size:1282K cn wxdh
f13n50.pdf 
F13N50 13A 500V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 500V planar technology which reduce the conduction loss, improve switching I = 13.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)
0.1. Size:922K fairchild semi
fqp13n50c fqpf13n50c.pdf
TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored t
0.2. Size:1148K fairchild semi
fqp13n50cf fqpf13n50cf.pdf
May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially t
0.3. Size:1062K fairchild semi
fqp13n50c fqpf13n50c.pdf
November 2013 FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 43 nC) technology has been especia
0.4. Size:625K fairchild semi
fdp13n50f fdpf13n50ft.pdf
September 2007 UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54 Features Description RDS(on) = 0.42 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 30nC) stripe, DMOS technology. Low Crss ( Typ. 14.5pF) This advanced technol
0.5. Size:880K fairchild semi
fqpf13n50 fqpf13n50t.pdf
TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored
0.6. Size:883K fairchild semi
fqp13n50 fqpf13n50.pdf
TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored
0.7. Size:891K fairchild semi
fqpf13n50csdtu fqpf13n50ct.pdf
TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored t
0.8. Size:1172K onsemi
fqp13n50c fqpf13n50c.pdf
FQP13N50C / FQPF13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 m Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using ON Semiconductor s ID = 6.5 A proprietary, planar stripe, DMOS technology. This Low Gate Charge (Typ. 43 nC) advanced technology has been especially tail
0.9. Size:618K onsemi
fqpf13n50cf.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.10. Size:882K onsemi
fqp13n50 fqpf13n50.pdf
TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored
0.11. Size:901K kec
kf13n50p-f.pdf
KF13N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF13N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 13A Dra
0.12. Size:427K aosemi
aot13n50 aotf13n50.pdf
AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
0.13. Size:159K aosemi
aotf13n50.pdf
AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
0.14. Size:298K sisemi
sif13n50c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHA
0.15. Size:510K silikron
ssf13n50.pdf
SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39 (typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 o
0.16. Size:533K silikron
ssf13n50f.pdf
SSF13N50F Main Product Characteristics VDSS 500V RDS(on) 0.41 (typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
0.17. Size:896K blue-rocket-elect
brf13n50.pdf
BRF13N50(BRCS13N50FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , Ultra low gate charge, low effective output capacitance, high switch speed. / Applications
0.18. Size:314K nell
irf13n50.pdf
RoHS IRF13N50 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (14A, 500Volts) DESCRIPTION The Nell IRF13N50 are N-channel enhancement mode D silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab
0.23. Size:1131K magnachip
mdf13n50gth mdp13n50gth.pdf
MDP13N50G / MDF13N50G N-Channel MOSFET 500V, 13.0A, 0.5 General Description Features VDS = 500V These N-channel MOSFET are produced using advanced VDS = 550V @ Tjmax MagnaChip s MOSFET Technology, which provides low on- ID = 13.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON)
0.24. Size:1209K magnachip
mdf13n50bth mdp13n50bth.pdf
MDP13N50B / MDF13N50B N-Channel MOSFET 500V, 13.0 A, 0.5 General Description Features The MDP/F13N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 13.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.5 @VGS = 10V excellent quality. MDP/F13N50B is suitable device for SMPS, HID Applications and general p
0.25. Size:854K bruckewell
msf13n50.pdf
MSF13N50 500V N-Channel MOSFET Description The MSF13N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (Typical 0.48 )@VGS=10V Ga
0.26. Size:514K winsemi
wff13n50.pdf
WFF13N50 WFF13N50 WFF13N50 WFF13N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 13A,500V, R (Max0.46 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produce
0.27. Size:1075K feihonltd
fhp13n50a fhf13n50a.pdf
N N-CHANNEL MOSFET FHP13N50A/FHF13N50A MAIN CHARACTERISTICS FEATURES ID 13A Low gate charge VDSS 500V Crss ( 23pF) Low Crss (typical 23pF ) Rdson-typ @Vgs=10V 0.34 Fast switching Qg-typ 45nC 100% 100% avalanche tested dv/dt Imp
0.28. Size:971K feihonltd
fhp13n50c fhf13n50c.pdf
N N-CHANNEL MOSFET FHP13N50C/FHF13N50C MAIN CHARACTERISTICS FEATURES ID 13A Low gate charge VDSS 500V Crss ( 11pF) Low Crss (typical 11pF ) Rdson-typ @Vgs=10V 0.4 Fast switching Qg-typ 40nC 100% 100% avalanche tested dv/dt Impr
0.29. Size:1086K maple semi
slp13n50a slf13n50a.pdf
LEAD FREE Pb RoHS SLP13N50A / SLF13N50A 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. - 13A, 500V, RDS(on) = 0.483 @VGS = 10 V This advanced technology has been especially tailored - Low gate charge ( typical 19.1nC) to minimize on-state resistance, provide superior switching - Low Crss (
0.30. Size:1319K maple semi
slp13n50c slf13n50c.pdf
SLP13N50C / SLF13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 13A, 500V, RDS(on)typ. = 386m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 44nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching
0.31. Size:816K samwin
swf13n50d swp13n50d.pdf
SW13N50D N-channel Enhancement mode TO-220F/TO-220 MOSFET TO-220F BVDSS 500V Features TO-220 ID 13A High ruggedness RDS(ON) 0.46 RDS(ON) (Typ 0.46 )@VGS=10V Gate Charge (Typ 47nC) 2 Improved dv/dt Capability 100% Avalanche Tested 1 1 2 2 Application LED,Charger 3 3 1 1. Gate 2. Drain 3. Source 3 General Description Thi
0.32. Size:336K trinnotech
tmp13n50 tmpf13n50.pdf
TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G VDSS = 550 V @Tjmax Features ID = 13A Low gate charge RDS(on) = 0.48 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP13N50 / TMPF13N50 TO-220 / TO-220F TMP13N50 / TMPF13N50 RoHS TMP13N50G / TMPF13N50G
0.33. Size:429K trinnotech
tmpf13n50a.pdf
TMPF13N50A N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 500V 13A
0.34. Size:1269K truesemi
tsp13n50m tsf13n50m.pdf
TSP13N50M/TSF13N50M 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 13A,500V,Max.RDS(on)=0.48 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 45nC) minimize on-state resistance, provide superior switching High ruggedness perfo
0.35. Size:1002K jiejie micro
jmpf13n50bj.pdf
JMPF13N50BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 13A Load Switch RDS(ON)
0.36. Size:8369K cn puolop
ptf13n50.pdf
PTF1 3 N5 0 5 00V/1 3 A N-Channel A dv anced Power MOSFET Features )@VGS=10V RDS(on) (Typical 0.44 Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation
0.37. Size:1322K cn sps
smirf13n50.pdf
SMIRF13N50 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 13A SMIRF13N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.48 (VGS=10V, ID=6.5A) on-state resistance, provide superi
0.38. Size:541K cn minos
mpf13n50.pdf
Silicon N-Channel Power MOSFET Description The MPF13N50 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features V =500V,I =13A DS D Schematic diagram Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapte
0.40. Size:278K inchange semiconductor
fqpf13n50cf.pdf
isc N-Channel MOSFET Transistor FQPF13N50CF FEATURES Drain Current I =13A@ T =25 D C Drain Source Voltage V =500V(Min) DSS Static Drain-Source On-Resistance R =0.54m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
0.41. Size:252K inchange semiconductor
aotf13n50.pdf
isc N-Channel MOSFET Transistor AOTF13N50 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.51 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
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