F20N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: F20N60 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 341 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Encapsulados: TO220F
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F20N60 datasheet
..1. Size:1216K cn wxdh
f20n60.pdf 
F20N60 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 600V planar technology which reduce the conduction loss, improve switching I = 20.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)
0.1. Size:450K 1
fqpf20n60 fqp20n60.pdf
FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The FQP20N60 & FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
0.2. Size:613K fairchild semi
fcp20n60 fcpf20n60.pdf
August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC ) r
0.3. Size:1056K fairchild semi
fcp20n60fs fcp20n60 fcpf20n60.pdf
December 2008 TM SuperFET FCP20N60 / FCPF20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge perfo
0.4. Size:642K onsemi
fcp20n60 fcpf20n60.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.5. Size:1411K kec
kgf20n60pa.pdf
SEMICONDUCTOR KGF20N60PA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Ti
0.6. Size:1523K kec
kgf20n60kda.pdf
SEMICONDUCTOR KGF20N60KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T
0.7. Size:540K aosemi
aotf20n60.pdf
AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
0.8. Size:383K aosemi
aot20n60 aotf20n60.pdf
AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
0.13. Size:463K silikron
ssf20n60h.pdf
SSF20N60H Main Product Characteristics VDSS 600V RDS(on) 0.2ohm(typ.) ID 20A Marking a nd p in TO247 Sche ma ti c di agr a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF20N60H series MOSFETs is a new technology w
0.14. Size:1187K blue-rocket-elect
brf20n60.pdf
BRF20N60(BRCS20N60FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , Ultra low gate charge, low effective output capacitance, high switch speed. / Applications
0.15. Size:328K silan
svf20n60f.pdf
SVF20N60F 20A 600V N 2 SVF20N60F N MOS F-CellTM VDMOS 1 3 1
0.17. Size:535K winsemi
wff20n60s.pdf
WFF20N60S WFF20N60S WFF20N60S WFF20N60S Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Ultra low Rdson Ultra-low Gate charge(Typical 68nC) 100% UIS Tested RoHS compliant General Description Winsemi Power MOSFET is fabricated using advanced super junction technology.The resulting device has extremely low
0.18. Size:271K winsemi
wff20n60.pdf
WFF20N60 WFF20N60 WFF20N60 WFF20N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 20A,600V,R (Max0.39 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 50nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced
0.20. Size:694K samwin
swf20n60k.pdf
SW20N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 600V ID 20A High ruggedness Low RDS(ON) (Typ 0.15 )@VGS=10V RDS(ON) 0.15 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application LED,Charger,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power
0.21. Size:647K samwin
sw20n60k swf20n60k.pdf
SW20N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS 600V ID 20A High ruggedness Low RDS(ON) (Typ 0.15 )@VGS=10V RDS(ON) 0.15 Low Gate Charge (Typ 60nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application LED,Charge,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power
0.22. Size:883K trinnotech
tgpf20n60fdr.pdf
TGPF20N60FDR Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Motor Drive, Air Conditioner, Inverter, Solar Devic
0.23. Size:790K truesemi
tsf20n60mr.pdf
TSF20N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 20A,600V,RDS(on)=0.4 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 57nC) minimize on-state resistance, provide superior switching High ruggedness performance, and wi
0.24. Size:3405K haolin elec
hf20n60 hp20n60.pdf
HF20N60,HP20N60 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Absolute Maximum Ratings TC = 25 unless otherwise noted C, Value Parameter Symbol Unit TO-220 TO-220F/ Drain-Source Voltage (VGS = 0V)
0.25. Size:1002K jiejie micro
jmpf20n60bj.pdf
JMPF20N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 20A Load Switch RDS(ON)
0.26. Size:1827K cn super semi
ssf20n60s ssp20n60s ssb20n60s.pdf
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSF20N60S/SSP20N60S/SSB20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is
0.27. Size:252K inchange semiconductor
aotf20n60.pdf
isc N-Channel MOSFET Transistor AOTF20N60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
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